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to-220 d2pak Datasheet PDF File

For to-220 d2pak Found Datasheets File :: 1614 Search Time::1.75ms
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				AME[Analog Microelectronics]
Part No.	AME8815BEDS250 AME8815AEBT180 AME8815AEGT180 AME8815BEBT180 AME8815BEGT180 AME8815AEBT330 AME8815AEGT330 AME8815BEBT330 AME8815BEGT330 AME8815AEBT475 AME8815BEBT475 AME8815BEB AME8815AEBT500 AME8815BEBT500 AME8815BECS330 AME8815AEGT475 AME8815BEGT475 AME8815BECS150 AME8815AECS150 AME8815BEGT500 AME8815 AME8815AEBT150 AME8815AEBT250 AME8815AECS180 AME8815AECS250 AME8815AECS330 AME8815AECS475 AME8815AECS500 AME8815AEDS150 AME8815AEDS180 AME8815AEDS250 AME8815AEDS330 AME8815AEDS475 AME8815AEDS500 AME8815AEGT150 AME8815AEGT250 AME8815AEGT500 AME8815BEBT150 AME8815BEBT250 AME8815BECS180 AME8815BECS250 AME8815BECS475 AME8815BECS500 AME8815BEDS150 AME8815BEDS180 AME8815BEDS330 AME8815BEDS475 AME8815BEDS500 AME8815BEGT150 AME8815BEGT250
OCR Text	...s. It is available in d2pak and to-220 packages. The space-efficient SOT-223 and DPAK package are attractive for "Pocket" and "Hand Held" applications. Output voltages are set at the factory and trimmed to 1.5% accuracy. These rugged device...
Description	1.5A CMOS LDO
File Size	106.32K / 17 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 330 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 1.6m ID = 160A Description Specifically designed for Automotive...220 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.028 1.2 --- --...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0m G S Description Specifically designed for Automotive applicatio...220 Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs IDSS IGSS Qg Qgs Qgd td(...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a to-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3706 IRF3706L IRF3706S
OCR Text	...valanche Voltage and Current to-220AB IRF3706 d2pak IRF3706S TO-262 IRF3706L Absolute Maximum Ratings Symbol VDS VGS ID @ TC I...220 28 Units mJ A Diode Characteristics Symbol IS I SM Parameter Continuous Source Curr...
Description	Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)
File Size	143.52K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...DS(on) max 6.0m ID 110A to-220AB IRF3711 d2pak IRF3711S TO-262 IRF3711L Parameter Drain-Source Voltage Gate-to-Source Volt...220 17 12 2980 1770 280 Max. Units Conditions --- S VDS = 16V, ID = 30A 44 ID = 15A --- nC VDS = 10V...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	...Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 3.3m Description Specifically designed for Automotive applications, ...220 160 75 890 130 2.2 20 TO-262 IRF3805L Units A Absolute Maximum Ratings Parameter ID @ ...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	...Repetitive Avalanche Allowed up to Tjmax Benefits q q q q q q VDSS = 75V G S RDS(on) = 0.007 ID = 106AV Description Designed ...220 ID = 82A 47 nC VDS = 60V 76 VGS = 10VT --- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V ...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 ns TJ = 25C, IF = -11A --- 830 1200 nC di/dt = -100A/s Intrinsic turn-on time is negligible (tu...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

For to-220 d2pak Found Datasheets File :: 1614 Search Time::1.75ms
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