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Integrated Device Technology, Inc.
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| Part No. |
71256L35YI IDT71256L35YI 71256L35YI8 IDT71256L35YI8
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| OCR Text |
...ble gnd ground v cc power 29 46 tb l 01 capacitance (t a = +25c, f = 1.0mhz) note: 1. this parameter is determined by device characteriza...tbl 03 symbol parameter (1) conditions max. unit c in input capacitance v in = 0v 11 pf c i/o i/o c... |
| Description |
32K X 8 STANDARD SRAM, 35 ns, PDSO28 0.300 INCH, SOJ-28
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| File Size |
108.34K /
10 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
M3004LAB1 M3004LD 1131
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| OCR Text |
...tion is defined by the distance tb between the leading edges of the flashed pulses or the first edge of the modulated pulses (see Figure 3)....tbL
17.6
8.8
121 121
Modulation Period High
The following number of pulses may be sel... |
| Description |
From old datasheet system
REMOTE CONTROL TRANSMITTER
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| File Size |
103.87K /
10 Page |
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it Online |
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INTEGRATED DEVICE TECHNOLOGY INC
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| Part No. |
IDT71T67902S80BG
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| OCR Text |
.../a v ss ground supply n/a 52 91 tb l 01 256k x 36, 512k x 18 2.5v synchronous srams 2.5v i/o, burst counter flow-through outputs, single cyc...tbl 02 pin definitions (1) note: 1. all synchronous inputs must meet specified setup and hold times... |
| Description |
512K X 18 CACHE SRAM, 8 ns, PBGA119
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| File Size |
514.50K /
23 Page |
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it Online |
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INTEGRATED DEVICE TECHNOLOGY INC
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| Part No. |
IDT71T67812S183BG
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| OCR Text |
...guaranteed in sleep mode. 52 90 tb l 02 pin definitions (1) note: 1. all synchronous inputs must meet specified setup and hold times with re...tbl 06 symbol parameter min. typ. max. unit v dd core supply voltage 2.375 2.5 2.625 v v ddq i/o sup... |
| Description |
512K X 18 CACHE SRAM, 3.3 ns, PBGA119
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| File Size |
513.77K /
23 Page |
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IDT
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| Part No. |
IDT71V25761S166PFI8
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| OCR Text |
...t dc output current 50 ma 52 97 tb l 03 grade temperature (1) v ss v dd v ddq commercial 0c to +70c 0v 3.3v 5% 2.5v 5% industrial -40c to +8...tbl 07 notes: 1. t a is the "instant on" case temperature. 119 bga capacitance (t a = +25c, f = 1.... |
| Description |
3.3V 128K x 36 Synchronous PipeLined Burst SRAM with 2.5V I/O
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| File Size |
279.68K /
22 Page |
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Integrated Device Technology, Inc.
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| Part No. |
IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S200PF IDT71V67613S183PF IDT71V67613S183BQ IDT71V67613S200BG
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| OCR Text |
.../a v ss ground supply n/a 53 12 tb l 01 features u u u u u 256k x 36, 512k x 18 memory configurations u u u u u supports high system speed:...tbl 04 symbol parameter min. typ. max. unit v dd core supply voltage 3.135 3.3 3.465 v v ddq i/o sup... |
| Description |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
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| File Size |
513.76K /
23 Page |
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it Online |
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Lelon Electronics
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| Part No. |
tb680M1HBK
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| OCR Text |
tb/tbL
Features
Aluminum Electrolytic Capacitors
CE02 Type
* 85, 1000 hours assured, * Bi-polarized, excellent high frequency response characteristic * Designed specifically for crossover network in Hi-Fi sound * Suitable for improv... |
| Description |
Aluminum Electrolytic Capacitors
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| File Size |
172.22K /
1 Page |
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Integrated Device Technology, Inc.
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| Part No. |
IDT71V2577 IDT71V2579 IDT71V2577S75BG
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| OCR Text |
.../a v ss ground supply n/a 48 77 tb l 01 128k x 36, 256k x 18 3.3v synchronous srams 2.5v i/o, flow-through outputs burst counter, single cyc...tbl 02
6.42 idt71v2577, idt71v2579, 128k x 36, 256k x 18, 3.3v synchronous srams with ... |
| Description |
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect
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| File Size |
522.79K /
23 Page |
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it Online |
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