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  silicon npn high power uhf tra Datasheet PDF File

For silicon npn high power uhf tra Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    2SC2429

Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
Part No. 2SC2429
Description silicon high SPEED TRIPLE DIFFUSED npn power traNSISTOR 10 AMP,400 VOLT
From old datasheet system
silicon high SPPED power traNSISTORS 高硅SPPED功率晶体

File Size 138.86K  /  3 Page

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    ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC0112 ISOPAC0119 ISOPAC02 ISOPAC0203 ISOPAC0204 ISOPAC0211 ISOPAC0212 ISO

International Rectifier, Corp.
Semtech Corporation
Part No. ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC0112 ISOPAC0119 ISOPAC02 ISOPAC0203 ISOPAC0204 ISOPAC0211 ISOPAC0212 ISOPAC0219 ISOPAC04 ISOPAC0403 ISOPAC0404 ISOPAC0411 ISOPAC0412 ISOPAC0419 ISOPAC06 ISOPAC0603 ISOPAC0604 ISOPAC0611 ISOPAC0612 ISOPAC12 ISOPAC1203 ISOPAC1204 ISOPAC1211 ISOPAC1212 ISOPAC1219 ISOPAC0619
Description high Current high density Isolated silicon power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
high Current high density Isolated silicon power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
high-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五,10纳秒- 2微秒
high CURRENT ISOLATED RECTIFIER ASSEMBLY
high Current high density Isolated silicon power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???

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    SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q62702-F202
Description npn silicon transistor with high Reve...
From old datasheet system
npn silicon transistors with high Reverse Voltage
Isolation- UL94V-0 Package Material- power Sharing on Output- Efficiency to 84%
npn silicon RF transisrors
npn silicon transistors (high breakdown voltage l Low collector-emitter saturation voltage) npn硅晶体管(高耐压l低集电极发射极饱和电压)

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    MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRF9200LR306 MRF9200LSR3 MW5IC2030

FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
Part No. MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRF9200LR306 MRF9200LSR3 MW5IC2030MBR106 MW5IC2030NBR1065 MW6IC2015GNBR1 MW6IC2015NBR1 NE76184A-TI MJE3055T MJE2955T
Description    COMPLEMENTARY silicon power traNSISTORS
COMPLEMETARY silicon power traNSISTORS
silicon npn traNSISTOR
high VOLTAGE PNP power traNSISTOR
silicon npn power DARLINGTON traNSISTOR
RF power Field Effect transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, power traNSISTOR, TO-220AB

File Size 57.87K  /  4 Page

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    CREE power
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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    2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JANTX2N5038 JANTX2N5039 JANTXV2N5038

Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JANTX2N5038 JANTX2N5039 JANTXV2N5038
Description npn high power silicon traNSISTOR 20 A, 90 V, npn, Si, power traNSISTOR, TO-204AA
npn high power silicon traNSISTOR 2 A, 90 V, npn, Si, power traNSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) npn high power silicon traNSISTOR
npn transistor

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    50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R 2SA1797-X-AB3-R 2SA2016L-AB3-R 2SA733-X-AE3-R 2SA733-X-AL3-R 2SA733L-X

UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R 2SA1797-X-AB3-R 2SA2016L-AB3-R 2SA733-X-AE3-R 2SA733-X-AL3-R 2SA733L-X-AE3-R 2SA73305 2SB1132-X-AB3-R 2SB1132-X-TN3-R 2SB1132-X-TN3-T 2SB1188-P-AB3-R 2SB1188-X-AB3-R 2SB1188L-X-AB3-R 2SB1202-X-TN3-T 2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1260-X-TN3-R 2SB1260-X-TN3-T 2SB1386-X-AB3-F-R 2SB1386L-X-AB3-F-R 2SB857-X-T6C-K 2SB857-X-TN3-R 2SB857-X-TN3-T 2SC1815-X-T92-A-B 2SC1815-X-T92-A-K 2SC1815L-X-T92-A-B 2SC181505 2SC3838-X-AE3-R 2SC3838-X-AL3-R 2SC3838L-X-AE3-R 2SC4774-AL3-R 2SC4793-TF3-T 2SC4793L-TF3-T 2SC5027-X-TA3-T 2SC5027-X-TF3-T 2SC5027E-X-TA3-T 2SC5027E-X-TF3-T 2SC5027EL-X-TA3-T 2SC5027L-X-TA3-T 2SC5353-TA3-T 2SC5353-TF3-T 2SD1804-X-TM3-T 2SD1804-X-TN3-R 2SD1804-X-TN3-T 2SD1816-X-TM3-F-T 2SD1816-X-TN3-F-K 2SD1816-X-TN3-F-R 2SD1857-X-T92-B 2SD1857-X-T92-K 2SD1857-X-T9N-B 2SD313-C-TA3-T 2SD313L-X-TA3-T 2SD882-X-T60-K 2SD882-X-TM3-T 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2SD882SS-Q-AE3-R 2SD882SSL-X-AE3-R BA6208-D08-T BA6208-G09-T BA6208-S08-R 2SA1020L-Y-T9N-R 2SA1020L-O-AB3-B 2SA1020L-O-AB3-K 2SA1020L-O-AB3-R 2SA1020L-O-T9N-B 2SA1020L-O-T9N-K 2SA1020L-O-T9N-R 2SA1020L-X-AB3-R 2SA1020L-X-T9N-B 2SA1020L-X-T9N-K 2SA1020L-Y-AB3
Description silicon PNP EPITAXIAL traNSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL traNSISTOR
silicon PNP EPITAXIAL traNSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
npn EPITAXIAL PLANAR traNSISTOR
high CURRENT SWITCHIG APPLICATIONS
high CURRENT SWITCHING APPLICATIONS
high VOLTAGE npn traNSISTOR
high VOLTAGE AND high RELIABILITY traNSISTOR
npn silicon traNSISTOR
high FREQUENCY AMPLIFIER traNSISTOR, RF SWITCHING (6V, 50mA)
high-FREQUENCY AMPLIFIER traNSISTOR
AUDIO FREQUENCY AMPLIFIER high FREQUENCY OSC npn traNSISTOR
silicon PNP traNSISTOR
LOW FREQUENCY PNP traNSISTOR
MEDIUM power LOW VOLTAGE traNSISTOR
MEDIUM power traNSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL silicon traNSISTOR
PNP EPITAXIAL PLANAR traNSISTOR
50 Amps, 60 Volts N-CHANNEL power MOSFET

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    MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172-14N1 MDD172-18N1

IXYS, Corp.
IXYS Corporation
Part No. MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172-14N1 MDD172-18N1
Description high power Diode Modules 大功率二极管模块
high power Diode Modules 190 A, 1600 V, silicon, RECTIFIER DIODE
high power Diode Modules 190 A, 800 V, silicon, RECTIFIER DIODE
high power Diode Modules 190 A, 1800 V, silicon, RECTIFIER DIODE
Thyristor and Rectifiers Modules

File Size 128.09K  /  3 Page

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    BUX11A

General Electric Solid State
GESS[GE Solid State]
ETC
Part No. BUX11A
Description high CURRENT high power high SPEED silicon N-P-N power traNSISTOR

File Size 174.03K  /  4 Page

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    2SD1641

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1641
Description silicon PNP TRIPLE DIFFUSED PLANAR TYPE high DC CURRNT GAIN,high power AMPLIFIER TV power SOURCE OUTPUT

File Size 108.10K  /  2 Page

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For silicon npn high power uhf tra Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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