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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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Part No. |
BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q62702-F202
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Description |
npn silicon transistor with high Reve... From old datasheet system npn silicon transistors with high Reverse Voltage Isolation- UL94V-0 Package Material- power Sharing on Output- Efficiency to 84% npn silicon RF transisrors npn silicon transistors (high breakdown voltage l Low collector-emitter saturation voltage) npn硅晶体管(高耐压l低集电极发射极饱和电压)
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File Size |
170.57K /
4 Page |
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CREE power
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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Part No. |
2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JANTX2N5038 JANTX2N5039 JANTXV2N5038
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Description |
npn high power silicon traNSISTOR 20 A, 90 V, npn, Si, power traNSISTOR, TO-204AA npn high power silicon traNSISTOR 2 A, 90 V, npn, Si, power traNSISTOR, TO-3 From old datasheet system (JAN2N5038 / JAN2N5039) npn high power silicon traNSISTOR npn transistor
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File Size |
54.47K /
2 Page |
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IXYS, Corp. IXYS Corporation
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Part No. |
MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172-14N1 MDD172-18N1
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Description |
high power Diode Modules 大功率二极管模块 high power Diode Modules 190 A, 1600 V, silicon, RECTIFIER DIODE high power Diode Modules 190 A, 800 V, silicon, RECTIFIER DIODE high power Diode Modules 190 A, 1800 V, silicon, RECTIFIER DIODE Thyristor and Rectifiers Modules
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File Size |
128.09K /
3 Page |
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it Online |
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Price and Availability
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