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    MICROSEMI[Microsemi Corporation]
Part No. LXMG1612-12-XX LXMG1612-12-01 LXMG1612-12-02 LXMG1612-12-03
OCR Text ...-898-8121, Fax: 714-893-2570 page 1 LXMG1612-12-xx TM (R) 12V Highly-Integrated, Digital Dimming CCFL Inverter Module PRODUCTIO...burst Duty=100%, VIN1=12VDC VBRT_ADJ=0VDC, SLEEP =HIGH, burst Duty=2.0%, VIN1=12VDC 0C <TA < 70C, VI...
Description 12V Highly-Integrated, Digital Dimming CCFL Inverter Module

File Size 129.01K  /  6 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP-33 HM66AQB18204BP-30 HM66AQB36104BP-30 HM66AQB36104BP-33 HM66AQB9404BP-30 HM66AQB18204BP-60 HM66AQB36104BP-60 HM66AQB9404BP-60 HM66AQB18204BP-40 HM66AQB9404BP-40 HM66AQB18204BP-50 HM66AQB36104BP-50 HM66AQB9404BP-50
OCR Text ...ations. Rev.0.03, Mar.31.2004, page 1 of 28 HM66AQB36104/18204/9404 Features * 1.8 V 0.1 V power supply for core (VDD) * 1.4 V to ...burst for reduced address frequency * Two input clocks (K and K) for precise DDR timing at clock ris...
Description Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 4-word burst

File Size 250.71K  /  34 Page

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    TM Technology, Inc.
Part No. T436416D T436416D-7SG T436416D-7C T436416D-7CG T436416D-5CG T436416D-5S T436416D-6SG T436416D-6CG TMTECHNOLOGYINC.-T436416D-7CG
OCR Text ...rst Length: 1, 2, 4, 8, or full page - burst Type: interleaved or linear burst - burst stop function * Auto Refresh and Self Refresh * 4096 refresh cycles/64ms * CKE power down mode * Single +3.3V 0.3V power supply * Interface: LVTTL * 54-...
Description 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM 4米16 SDRAM00万x 16Bit的X 4Banks同步DRAM

File Size 739.03K  /  73 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AQB18204BP-30
OCR Text ...itself. Renesas Technology Home page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions ...burst TM ADE-203-1331B (Z) Preliminary Rev. 0.2 Jan. 14, 2003 Description The HM66AQB36104 is a...
Description 36 MBit QDR II SRAM 4 Word burst

File Size 265.98K  /  33 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP-60 HM66AQB36102BP-60 HM66AQB9402BP-60 HM66AQB36102BP-40 HM66AQB9402BP-40 HM66AQB36102BP-50 HM66AQB9402BP-50
OCR Text ...ations. Rev.0.01, Mar.31.2004, page 1 of 27 HM66AQB36102/18202/9402 Features * 1.8 V 0.1 V power supply for core (VDD) * 1.4 V to ...burst for low DDR transaction size * Two input clocks (K and K) for precise DDR timing at clock risi...
Description Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 2-word burst

File Size 236.07K  /  31 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 HM66AEB36105BP-30 HM66AEB36105BP-33 HM66AEB9405BP-30 HM66AEB9405BP-33 HM66AEB36105BP-60 HM66AEB18205BP-60 HM66AEB9405BP-60 HM66AEB18205BP-40 HM66AEB36105BP-40 HM66AEB9405BP-40 HM66AEB18205BP-50 HM66AEB36105BP-50 HM66AEB9405BP-50
OCR Text ...ations. Rev.0.01, Apr.28.2004, page 1 of 28 HM66AEB36105/18205/9405 Features * 1.8 V 0.1 V power supply for core (VDD) * 1.4 V to ...burst for low DDR transaction size * Two input clocks (K and K) for precise DDR timing at clock risi...
Description Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word burst

File Size 237.38K  /  32 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP-30 HM66AEB36104BP-30 HM66AEB36104BP-33 HM66AEB9404BP-30 HM66AEB9404BP-33 HM66AEB36104BP-60 HM66AEB18204BP-60 HM66AEB9404BP-60 HM66AEB36104BP-40 HM66AEB9404BP-40 HM66AEB18204BP-50 HM66AEB36104BP-50 HM66AEB9404BP-50
OCR Text ...ations. Rev.0.01, Apr.05.2004, page 1 of 28 HM66AEB36104/18204/9404 Features * 1.8 V 0.1 V power supply for core (VDD) * 1.4 V to ...burst for reduced address frequency * Two input clocks (K and K) for precise DDR timing at clock ris...
Description Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word burst

File Size 239.34K  /  32 Page

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    Cypress
Part No. CY7C1303BV25-100BZXC CY7C1306BV25-100BZXC
OCR Text ...Document #: 38-05627 Rev. ** page 2 of 19 PRELIMINARY Pin Configuration - CY7C1303BV25 (Top View) 1 A B C D E F G H J K L M N P R N...burst of two sequential 18-bit or 36-bit transfers. Positive Output Clock Input. C is used in conjun...
Description 18-Mbit burst of 2 Pipelined SRAM with QD(TM) Architecture

File Size 246.26K  /  19 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AEB18204BP-30
OCR Text ...itself. Renesas Technology Home page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions ...burst ADE-203-1368 (Z) Preliminary Rev. 0.0 Jan. 27, 2003 Description The HM66AEB36104 is a 1,04...
Description 36 MBit DDR II SRAM 4 Word burst

File Size 245.90K  /  32 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 HM66AEB18202BP-33 HM66AEB36102BP-30 HM66AEB36102BP-33 HM66AEB9402BP-30 HM66AEB9402BP-33 HM66AEB18202BP-60 HM66AEB36102BP-60 HM66AEB9402BP-60 HM66AEB18202BP-40 HM66AEB9402BP-40 HM66AEB18202BP-50 HM66AEB36102BP-50 HM66AEB9402BP-50
OCR Text ...ations. Rev.0.01, Apr.28.2004, page 1 of 28 HM66AEB36102/18202/9402 Features * 1.8 V 0.1 V power supply for core (VDD) * 1.4 V to ...burst for low DDR transaction size * Two input clocks (K and K) for precise DDR timing at clock risi...
Description Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word burst

File Size 235.78K  /  32 Page

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