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nitride silicon Datasheet PDF File

For nitride silicon Found Datasheets File :: 1770 Search Time::2.25ms
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				NEC[NEC] NEC Corp. NEC, Corp.
Part No.	2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2
OCR Text	...ity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. FEATURES * Low Voltage Use. * High fT * Low Cre * Low NF : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA,...
Description	NPN silicon EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits NPN silicon EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模 NPN epitaxial-type silicon transistor
File Size	60.49K / 10 Page	View it Online	Download Datasheet

				http:// NEC[NEC] NEC Corp.
Part No.	2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2
OCR Text	...ity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. FEATURES * Low Voltage Use. * High fT * Low Cre * Low NF : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA,...
Description	NPN epitaxial-type silicon transistor NPN silicon EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Discrete
File Size	62.00K / 10 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2
OCR Text	...ity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. PACKAGE DIMENSIONS in millimeters 1.6 0.1 0.8 0.1 2 0.5 1.6 0.1 1.0 0.2+0.1 -0 0.3 +0.1 -0 0...
Description	NPN epitaxial-type silicon transistor NPN silicon EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
File Size	59.73K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text	...ity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary new fabrication technique. 1.6 0.1 1.0 PACKAGE DIMENSIONS in milimeters 1.6 0.1 0.8 0.1 2 0.2+0.1 -0 0.5 0.3 +0.1 -0 ...
Description	NPN epitaxial-type silicon transistor NPN silicon EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
File Size	57.57K / 10 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text	...ity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique. FEATURES * Low Voltage Use. * High fT * Low Cre * Low NF : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA...
Description	NPN epitaxial-type silicon transistor NPN silicon EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 128 x 128 pixel format, LED or EL Backlight available
File Size	59.95K / 10 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	INA-01170
OCR Text	...icon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformit...
Description	Low Noise, Cascadable silicon Bipolar MMIC Amplifier Low Noise/ Cascadable silicon Bipolar MMIC Amplifier
File Size	43.00K / 3 Page	View it Online	Download Datasheet

				Maxim Integrated Products
Part No.	MAX811TEUS
OCR Text	...7 x 31 mils Si3N4/SiO2 (silicon nitride/ silicon dioxide) Aluminum/Copper/Si None 1.2 microns (as drawn) 1.2 microns (as drawn) 5 mil. Sq. SiO2 Wafer Saw V. Quality Assurance Information A. Quality Assurance Contacts: Jim Pedicord (Relia...
Description	PLASTIC ENCAPSULATED DEVICES
File Size	54.89K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPC8178TB UPC8179 UPC8179TB UPC8179TB-E3 UPC8128TB UPC8151TB UPC8152TB UPC8179TB1 PC8179TB-E3
OCR Text	...his process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. ...
Description	silicon MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
File Size	150.83K / 28 Page	View it Online	Download Datasheet

				NEC Corp. California Eastern Labs NEC[NEC]
Part No.	UPC8179TK UPC8179TK-E3
OCR Text	...his process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/ migration. Thus this IC has excellent performance uniformity and reliability. N...
Description	silicon MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
File Size	239.26K / 6 Page	View it Online	Download Datasheet

				Avago Technologies, Ltd. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	MSA-9970
OCR Text	...bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also a...
Description	Cascadable silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大
File Size	44.98K / 4 Page	View it Online	Download Datasheet

For nitride silicon Found Datasheets File :: 1770 Search Time::2.25ms
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