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  n-channel enhancement-mode Datasheet PDF File

For n-channel enhancement-mode Found Datasheets File :: 15483    Search Time::1.594ms    
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    APM4835 APM4835KC-TR APM4835KC-TU

Anpec Electronics Corporation
ETC[ETC]
ANPEC[Anpec Electronics Coropration]
http://
Part No. APM4835 APM4835KC-TR APM4835KC-TU
OCR Text ...king Information APM 4835 H a n d lin g C o d e Tem p. R ange P ackage C ode DD DD P-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube T...
Description P-Channel Enhancement Mode MOSFET

File Size 125.16K  /  9 Page

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    BCM7038

Broadcom
ETC
Part No. BCM7038
OCR Text ...p ort 65 6 In put IF IF D em od N T S C /P A L V id eo D ec ode r 2x M P E G H D /S D V ideo D e co der 6x V ideo DACs V id eo an d G ra phic s P roc es s in g (B V N ) VEC (D ua l C han nel) H D M I/D V I 65 6 R F M od V ID E O C ...
Description Dual High-Definition Digital Video System-on-Chip Solution for Cable, Satellite, and DTV
DUAL HD DIGITAL VIDEO SYSTEM ON CHIP SOLUTION FOR CABLE SATELLITE AND DTV

File Size 383.79K  /  2 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shortet to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 120 VDS 100 V ID 19 A RDS(on) 0.1 Package TO-220AB ...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
n-channel TEMPFET

File Size 310.34K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text n-channel Power MOSFETs Description These are n-channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ n-channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, n-channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, n-channel, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text n-channel Power MOSFETs Description These are n-channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, n-channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ n-channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF460

SEME-LAB[Seme LAB]
Part No. IRF460
OCR Text ...135) 6.35 (0.25) 9.15 (0.36) n-channel ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 22.23 (0.875) max. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) ...
Description n-channel ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 16.77K  /  2 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I s s s s s s s s V DSS 100 V 100 V R DS(on) < 0.16 < 0.16 ID 16 A 11 A TYPICAL RDS(on) = 0.12 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETI...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP s s s s s s V DSS 100 V R DS(on) < 0.16 ID 10 A s s TYPICAL RDS(on) = 0.12 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text n-channel TrenchMOSTM transistor IRF530N FEATURES * 'Trench' technology * Low on-state resistance * Fast switching * Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) 110 m s GENERA...
Description n-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
n-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text n-channel MOSFET General Description These n-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on...
Description 500V n-channel MOSFET

File Size 908.43K  /  10 Page

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