Part Number Hot Search : 
SMAJ170 M63815FP 2SK210 MAX3221 MNR4G MBZ52 3KP100A SMAJ170
Product Description
Full Text Search
  low power sram organization wo Datasheet PDF File

For low power sram organization wo Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IXYS CORP
Part No. GX60N60C2D1
Description Fast sram &gt; Late Write Synchronous sram; organization (word): 512K; organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (&#176;C): 1.5; Package: BGA (119)

File Size 615.83K  /  5 Page

View it Online

Download Datasheet





    IRLU8721PBF IRLR8721PBF

International Rectifier, Corp.
Part No. IRLU8721PBF IRLR8721PBF
Description Asynchronous sram; organization (word): 1M; organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
HEXFET power MOSFET HEXFET功率MOSFET

File Size 365.88K  /  11 Page

View it Online

Download Datasheet

    Seiko NPC Corporation
Part No. CF5015 CF5015AL2 CF5015AL1-2 CF5015AL2-2
Description low power sram; organization (word): 1M; organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
low power sram; organization (word): 1M; organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
low power sram; organization (word): 1M; organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
low power sram; organization (word): 1M; organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
low power sram; organization (word): 1M; organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
low power sram; organization (word): 1M; organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (&#176;C): 0 to 70; Package: FBGA (48)
low power sram; organization (word): 1M; organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (&#176;C): 0 to 70; Package: FBGA (48)
low power sram; organization (word): 1M; organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (&#176;C): -40 to 85; Package: FBGA (48)

File Size 94.87K  /  10 Page

View it Online

Download Datasheet

    IRS2118SPBF

International Rectifier
Part No. IRS2118SPBF
Description Asynchronous sram; organization (word): 256K; organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  

File Size 363.03K  /  19 Page

View it Online

Download Datasheet

    IRS21853SPBF

International Rectifier
Part No. IRS21853SPBF
Description Asynchronous sram; organization (word): 256K; organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  

File Size 180.84K  /  17 Page

View it Online

Download Datasheet

    IRLU3410PBF

International Rectifier
Part No. IRLU3410PBF
Description Asynchronous sram; organization (word): 512K; organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:  

File Size 283.97K  /  11 Page

View it Online

Download Datasheet

    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M38232G4-XXXFP M38232G4-XXXHP M38233G4-XXXFP M38233G4-XXXHP M38234G4-XXXFP M38234G4-XXXHP M38235G4-XXXFP M38230G6-XXXFP M38230G6-XXXHP M38231G6-XXXFP M38231G6-XXXHP M38232G6-XXXFP M38232G6-XXXHP M38233G6-XXXFP M38233G6-XXXHP M38234G6-XXXFP M38234G6-XXXHP M38235G6-XXXFP M38235G6-XXXHP M38236G6-XXXHP M38237G6-XXXFP M38237G6-XXXHP M38238G6-XXXFP M38230G7-XXXFP M38230G7-XXXHP M38231G7-XXXFP M38231G7-XXXHP M38232G7-XXXFP M38232G7-XXXHP M38233G7-XXXFP M38233G7-XXXHP M38234G7-XXXFP M38234G7-XXXHP M38235G7-XXXFP M38235G7-XXXHP M38236G7-XXXFP M38236G7-XXXHP M38237G7-XXXFP M38237G7-XXXHP M38238G7-XXXFP M38238G7-XXXHP M38239G7-XXXFP M38239G7-XXXHP M38230G8-XXXFP M38230G8-XXXHP M38231G8-XXXFP M38231G8-XXXHP M38232G8-XXXFP M38232G8-XXXHP M38233G8-XXXFP M38233G8-XXXHP M38234G8-XXXFP M38234G8-XXXHP M38235G8-XXXFP M38235G8-XXXHP M38236G8-XXXFP M38236G8-XXXHP M38237G8-XXXFP M38237G8-XXXHP M38238G8-XXXFP M38238G8-XXXHP M38230GA-XXXFP M38230GA-XXXHP M38231GA-XXXFP M38231GA-XXXHP M38232GA-XXXFP M38232GA-XXXHP M38233GA-XXXFP M38233GA-XXXHP M38234GA-XXXFP M38234GA-XXXHP M38235GA-XXXFP M38235GA-XXXHP M38236GA-XXXFP M38236GA-XXXHP M38237GA-XXXFP M38237GA-XXXHP
Description 18-Mbit (512K x 36/1M x 18) Flow-Through sram; Architecture: Standard Sync, Flow-through; Density: 18 Mb; organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II sram 4-word Burst Architecture; Architecture: QDR-II, 4 word Burst; Density: 36 Mb; organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II sram 2-word Burst Architecture; Architecture: DDR-II CIO, 2 word Burst; Density: 36 Mb; organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined sram; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II sram 2-word Burst Architecture; Architecture: QDR-II, 2 word Burst; Density: 72 Mb; organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through sram; Architecture: Standard Sync, Flow-through; Density: 18 Mb; organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II sram 2-word Burst Architecture; Architecture: QDR-II, 2 word Burst; Density: 36 Mb; organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through sram with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II sram 2-word Burst Architecture; Architecture: QDR-II, 2 word Burst; Density: 72 Mb; organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync sram; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II sram 2-word Burst Architecture; Architecture: DDR-II CIO, 2 word Burst; Density: 72 Mb; organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync sram; Architecture: QDR-II, 2 word Burst; Density: 36 Mb; organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II sram 2-word Burst Architecture; Architecture: DDR-II CIO, 2 word Burst; Density: 36 Mb; organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II sram 4-word Burst Architecture; Architecture: QDR-II, 4 word Burst; Density: 72 Mb; organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync sram; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II sram 4-word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 word Burst; Density: 72 Mb; organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II sram 2-word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 word Burst; Density: 72 Mb; organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync sram; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II sram 2-word Burst Architecture; Architecture: DDR-II CIO, 2 word Burst; Density: 72 Mb; organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through sram; Architecture: Standard Sync, Flow-through; Density: 18 Mb; organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II sram 4-word Burst Architecture; Architecture: QDR-II, 4 word Burst; Density: 72 Mb; organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II sram 2-word Burst Architecture; Architecture: QDR-II, 2 word Burst; Density: 72 Mb; organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II sram 4-word Burst Architecture; Architecture: QDR-II, 4 word Burst; Density: 36 Mb; organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync sram; Architecture: QDR-II, 2 word Burst; Density: 36 Mb; organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II sram 2-word Burst Architecture; Architecture: DDR-II CIO, 2 word Burst; Density: 36 Mb; organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II sram 2-word Burst Architecture; Architecture: DDR-II CIO, 2 word Burst; Density: 72 Mb; organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II sram 2-word Burst Architecture; Architecture: QDR-II, 2 word Burst; Density: 36 Mb; organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V

File Size 901.80K  /  76 Page

View it Online

Download Datasheet

    IRS21271SPBF IRS21281SPBF IRS2127SPBF

International Rectifier
Part No. IRS21271SPBF IRS21281SPBF IRS2127SPBF
Description Asynchronous sram; organization (word): 256K; organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
Asynchronous sram; organization (word): 1M; organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  

File Size 364.93K  /  21 Page

View it Online

Download Datasheet

    N256S0818HDA N256S0830HDA N256S08XXHDA N256S0818HDAT220

AMI SEMICONDUCTOR
Part No. N256S0818HDA N256S0830HDA N256S08XXHDA N256S0818HDAT220
Description 32K X 8 STANDARD sram, 25 ns, PDSO8
256Kb low power Serial srams 32K 】 8 bit organization
256Kb low power Serial srams 32K × 8 bit organization

File Size 199.14K  /  15 Page

View it Online

Download Datasheet

    Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1543KV18-400BZC CY7C1545KV18-450BZXI
Description Sync sram; Architecture: QDR-II , 4 word Burst; Density: 72 Mb; organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR sram, 0.45 ns, PBGA165
2M X 36 QDR sram, 0.45 ns, PBGA165

File Size 562.79K  /  28 Page

View it Online

Download Datasheet

For low power sram organization wo Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of low power sram organization wo

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.0585119724274