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ADPOW[Advanced Power Technology]
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| Part No. |
APT10035LLL APT10035B2LL APT10035B2LL_03 APT10035B2LL03
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| OCR Text |
...
(Body Diode) (VGS = 0V, IS = -id28a)
Reverse Recovery Time (IS = -id28a, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -id28a, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Charact... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
90.00K /
5 Page |
 View
it Online |
Download Datasheet
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
MICROSEMI POWER PRODUCTS GROUP
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| Part No. |
APT10045LLL APT10045B2LL APT10045B2LL_03 APT10045B2LL03 B2LLG
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| OCR Text |
...er than the device itself. IS -id28a di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 23; RDS(on) (Ohms): 0.45; BVDSS (V): 1000;
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| File Size |
90.08K /
5 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| Part No. |
APT10035LFLL APT10035B2FLL APT10035B2FLL_03 APT10035B2FLL03
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| OCR Text |
...er than the device itself. IS -id28a di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
88.90K /
5 Page |
View
it Online |
Download Datasheet |
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