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  900v-2.3-5.6a- Datasheet PDF File

For 900v-2.3-5.6a- Found Datasheets File :: 172    Search Time::2.812ms    
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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ...itions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = 0.8A IC ...2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

File Size 61.72K  /  3 Page

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    FS3UM-18 FS3UM-18A FS4VS-12 FS20SM-6 FS40SM-6 FS3UM

Mitsubishi Electric, Corp.
Powerex Power Semiconductors
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS3UM-18 FS3UM-18A FS4VS-12 FS20SM-6 FS40SM-6 FS3UM
OCR Text .................................. 900V rDS (ON) (MAX) ................................................................ 4.0 ID ...................2 Unit V V A A W C C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS3UM-18A HI...
Description HIGH-SPEED SWITCHING USE 高速开关使
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 40.90K  /  4 Page

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    STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1
OCR Text 900V - 2.1 - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHTMIII MOSFET TYPE STP5NC90Z/FP STB5NC90Z/-1 s s VDSS 900V 900V RDS(on) < 2.5 < 2.5 ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 2.1 EXTREMELY HIGH dv/dt AND CAPA...
Description N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET

File Size 514.47K  /  13 Page

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    TS925 TS925A TS925I 4949

STMicroelectronics
ST Microelectronics
意法半导
Part No. TS925 TS925A TS925I 4949
OCR Text ... 12V LOW INPUT OFFSET VOLTAGE : 900V max. (TS925A) ADJUSTABLE PHANTOM GROUND (VCC/2) STANDBY MODE N DIP16 (Plastic Package) D SO16 (Plastic Micropackage) ESD INTERNAL PROTECTION : 2kV LATCH-UP IMMUNITY MACROMODEL INCLUDED IN THIS S...
Description RAIL TO RAIL HIGH OUTPUT CURRENT QUAD OPERATIONAL AMPLIFIER
From old datasheet system

File Size 142.56K  /  16 Page

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    STB6NC90Z STB6NC90Z-1 STP6NC90ZFP STP6NC90Z

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STB6NC90Z STB6NC90Z-1 STP6NC90ZFP STP6NC90Z
OCR Text 900V - 1.55 - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHTMIII MOSFET TYPE STP6NC90Z STP6NC90ZFP STB6NC90Z STB6NC90Z-1 s s VDSS ...2 TO-220 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFE...
Description N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET N沟道900V - 1.55ohm - 5.4A TO-220/FP/D?巴基斯我?巴基斯坦齐保护的PowerMESH⑩三MOSFET
N-CHANNEL 900V - 1.55 OHM - 5.4A TO-220/FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET

File Size 530.91K  /  13 Page

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    2SC3981 2SC3981A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC3981 2SC3981A
OCR Text ...fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC...2.5 0.3 800 8 6 1.5 1.5 V V MHz s s s min typ max 50 50 50 Unit A A V 1 Power Transistors PC ...
Description TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.24K  /  3 Page

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    2SC3982 2SC3982A

PANASONIC[Panasonic Semiconductor]
Part No. 2SC3982 2SC3982A
OCR Text ...fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC...2.0 1.5 3.0 1 Power Transistors PC -- Ta 200 12 TC=25C (1) TC=Ta (2) With a 100 x 100 x ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 60.92K  /  3 Page

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    FS3KM-18A FS3VS-14A

MITSUBISHI[Mitsubishi Electric Semiconductor]
Powerex Power Semiconductors
Part No. FS3KM-18A FS3VS-14A
OCR Text .................................. 900V rDS (ON) (MAX) ................................................................ 4.0 ID ...................2 Unit V V A A W C C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value MITSUB...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 45.85K  /  4 Page

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    2SK2652 2SK2652-01

FUJI[Fuji Electric]
Part No. 2SK2652 2SK2652-01
OCR Text ...che Rated N-channel MOS-FET 900V 2,5 6A 125W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings...
Description N-channel MOS-FET

File Size 312.06K  /  2 Page

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    2SK2651 2SK2651-01MR

FUJI[Fuji Electric]
Part No. 2SK2651 2SK2651-01MR
OCR Text ...che Rated N-channel MOS-FET 900V 2,5 6A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings ...
Description N-channel MOS-FET

File Size 325.21K  /  2 Page

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