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ST Microelectronics
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Part No. |
STF11NM60N
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OCR Text |
...ource voltage slope vdd=400v,id=5a, vgs=10v 45 v/ns i dss zero gate voltage drain current (v gs = 0) v ds =max rating, v ds =max rating,tc=125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate thresho... |
Description |
N-channel Second generation MDmesh Power MOSFET
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File Size |
477.67K /
17 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOT7S65
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OCR Text |
...citance, time related i i s =3.5a,v gs =0v, t j =25c input capacitance v gs =0v, v ds =100v, f=1mhz output capacitance turn-off delaytime g...650v, v gs =0v v ds =520v, t j =150c zero gate voltage drain current i d =250 a, v gs =0v, t j =150... |
Description |
650v 7A a MOS TM Power Transistor
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File Size |
712.26K /
7 Page |
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it Online |
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Icemos Technology
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Part No. |
ICE15N65
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OCR Text |
... single pulse e as i d =7.5a 460 mj avalanche current, repetitive i ar limited by t j max 7.5 a mosfet d v /d t ...650v, v gs =0v, t j =25 o c - 0.1 1 a v ds =650v, v gs =0v, t j =150 o c - - ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
556.32K /
9 Page |
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it Online |
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ST Microelectronics, Inc.
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Part No. |
STP12NK60Z
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OCR Text |
... VGS, ID = 100A VGS = 10V, ID = 5a 3 3.75 0.53 Min. 600 1 50 10 4.5 0.64 Typ. Max. Unit V A A A V
Table 5.
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Td(on) Tr Td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input ... |
Description |
N-CHANNEL 600V - 0.53Ohm - 10A TO220/TO-220FP ZENER-PROTECTED SUPERMESH™ MOSFET
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File Size |
316.97K /
14 Page |
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it Online |
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Micross Components
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Part No. |
ICE10N65FP
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OCR Text |
...50 v/ns v ds = 480v, i d = 9.5a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c ...650v min r ds(on) v gs = 10v 0.35? typ q g v ds = 480v 41nc typ micross components ltd, united kin... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
750.16K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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