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  50 75-ohm Datasheet PDF File

For 50 75-ohm Found Datasheets File :: 14018    Search Time::1.312ms    
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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text 50 GB 170 DN2 IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base ...75 4000 20 11 F 55 / 150 / 56 Vac mm K/W C TC = 25 C Chip temperature Storage temperature Therma...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ... 400V See Fig.8 49 74 VGE = 15V 50 -- 30 -- TJ = 25C ns 110 170 IC = 13A, VCC = 480V 91 140 VGE = 15V, RG = 10 0.56 -- Energy losses include...75 100 125 A 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase T...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ...e 1a) Units V V A W 11.5 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, T...75 100 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...RENT (A) 75 D uty cycle : 50 % T J = 12 5 C T sink = 90 C G a te d rive a s spe cified P ow er D is s ipation = 170 W S q u a re w a v e : 50 60% of rated v oltage I 25 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...AD CURRENT (A) D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified P ow e r Dis sip ation = 120 W S q u a re w a v e : ...75 IC =62.5 A 50 25 0 25 50 75 100 125 150 TC , Case Temperature ( C) 1.0 -60 -40 ...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...Temperature Range Max. 1200 50 100 100 100 20 2500 280 145 -40 to +150 -40 to +125 Units V A V W C Thermal / Mechanical Charac...75 100 125 150 TC , Case Temperature ( C) 1.0 -60 -40 -20 0 20 40 60 80 100 12...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...0U 80 F o r b o th : 70 60 50 40 30 20 Id e a l d io d e s 10 0 0.1 1 10 LOAD CURRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 C T...75 A IC= 37A = 37.5 A 20 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ... 0.8 0.6 0.4 0.2 0 2 0 0 50 100 150 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CUR...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...0.4 0.2 0 9 6 3 0 0 50 100 150 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CUR...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...RRENT (A) -20 -15 -10 -5 0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 150 0.6 0.4 0.2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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For 50 75-ohm Found Datasheets File :: 14018    Search Time::1.312ms    
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