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				Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
Part No.	DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text	...f wave resistive load 1315 2065 1880 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward...00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, O...
Description	Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE
File Size	94.85K / 7 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	...ations. Specified for GSM1805 - 1880 MHz. * Typical GSM Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain -- 13 dB (Typ) @ 60 Wa...00 ZOL* 2.27 + j3.44 2.05 + j3.05 1.90 + j2.90 1.64 + j2.88 1.29 + j2.99 = Complex conjugate of ...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	...TS) 100 100 mA VDD = 26 Vdc f = 1880 MHz IDQ = 750 mA 100 90 80 70 60 50 40 30 20 10 0 18 20 VDD = 26 Vdc IDQ = 500 mA 22 24 26 VDD, SUPPLY ...00 Zload 2.27 - j3.44 2.05 - j3.05 1.90 - j2.90 1.64 - j2.88 1.29 - j2.99 Zsource = Test circuit...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text	...0 mA, Pout = 85 W CW f MHz 1805 1880 1930 1990 Zsource 1.43 - j3.74 1.27 - j3.95 1.5 - j4.13 1.86 - j4.76 Zload 2 - j3.60 1.98 - j3.57 2.1...00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb...
Description	RF Power Field Effect Transistors
File Size	607.07K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF180101 PTF180101S
OCR Text	1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Description The PTF180101 is a 10 W, internally-matched GOLDMOS FET device intended for EDGE a...00 Efficiency (%) ACPR (dBc) -70 -80 30 20 Efficiency 10 0 -90 -100 25 30 35 40 0....
Description	LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
File Size	306.52K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF180601 PTF180601C PTF180601E
OCR Text	1880 MHz, 1930-1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS ...00 0.99 0.98 0.97 0.96 0.95 -20 0.40 1.53 2.67 3.80 4.93 6.07 0 20 40 60 80 100 ...
Description	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦，DCS / PCS的兆赫波8050年，1930-1990兆赫 LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
File Size	229.29K / 11 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	LET19060C
OCR Text	... 18 % DYNAMIC (f = 1805 - 1880 MHz) P1dB GP D(1) POUT(EDGE) D(EDGE) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD EV...00 TYP. Ref. 1023153 3/4 LET19060C Information furnished is believed to be accurate a...
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技 RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
File Size	33.82K / 4 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MAMXES0042
OCR Text	...480 680 880 1080 1280 1480 1680 1880 2080 2280 2480 2680 2880 Frequency (MHz) Isolation (dB) LOto R F Frequency (M Hz) Frequency...00 IIP3 & 1dB Compression 31 35 2 1 1 2 9 5 4 4 5 5 35.00 30.00 IIP3 3 30 3.00 2.50 P...
Description	E-Series Surface Mount Mixer 80 . 2500 MHz
File Size	51.28K / 2 Page	View it Online	Download Datasheet

				RFMD[RF Micro Devices]
Part No.	RF2125P RF2125PPCBA
OCR Text	...CS1800 (1710 to 1785 MHz) DECT (1880 to 1990 MHz) C1 (pF) 3.3 C2 (pF) 7.5 C3 (pF) 3.6 C4 (pF) 3.9 3.0 3.9 2.7 3.6 2125402 Rev Broadband and Unlicensed PCS (1850 to 1910 MHz) 3.6 4.3 2.4 3.9 Broadband and Unlicensed PCS (19...
Description	HIGH POWER LINEAR AMPLIFIER
File Size	50.55K / 6 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	UPA1803 UPA1803GR-9JG PA1803
OCR Text	...= 100 A / s 1.0 3 1.9 14 8.6 11 1880 571 214 27 77 72 47 36 5.1 8.7 0.78 37 35 12 16 MIN. TYP. MAX. 10 10 2.5 UNIT A A V S m m pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. ...
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	62.56K / 8 Page	View it Online	Download Datasheet

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