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ADPOW
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| Part No. |
VRF151
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| OCR Text |
...0mA f = 175MHz VDD = 50V POUT = 150wpep IDQ = 250mA f = 30MHz f = 175MHz f1 = 30MHz VDD = 50V f = 30MHz VDD = 50V POUT = 150wpep IDQ = 250mA VDD = 50V POUT = 150wpep IDQ = 250mA f2=30.001MHz POUT = 150wpep IDQ = 250mA VDD = 50V POUT = 150WP... |
| Description |
N-CHANNEL RF POWER VERTICAL MOSFET
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| File Size |
206.44K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
VRF150
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| OCR Text |
...0mA f = 150MHz VDD = 50V POUT = 150wpep IDQ = 250mA f = 30MHz f = 150MHz f1 = 30MHz VDD = 50V f = 30MHz VDD = 50V POUT = 150wpep IDQ = 250mA VDD = 50V POUT = 150wpep IDQ = 250mA f2=30.001MHz POUT = 150wpep IDQ = 250mA VDD = 50V POUT = 150WP... |
| Description |
N-CHANNEL RF POWER VERTICAL MOSFET
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| File Size |
205.69K /
5 Page |
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it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
MS1007
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| OCR Text |
...B
Conditions f = 30 MHz POUT = 150wpep POUT = 150wpep POUT = 150wpep f = 1 MHz f1 = 30.000MHz
Test Conditions
VCE = 50V VCE = 50V VCE = 50V VCE = 50V VCB = 50 V f2 = 30.001MHz ICQ = 100mA ICQ = 100mA ICQ = 100mA ICQ = 100mA
Min.
15... |
| Description |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
157.18K /
4 Page |
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it Online |
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TOSHIBA
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| Part No. |
2SC2510
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| OCR Text |
...ain Collector Efficiency : Po = 150wpep (Min.) : Gp = 12.2dB (Min.) : C = 35% (Min.)
Intermodulation Distortion : IMD = -30dB (Max.)
MAXIMUM RATINGS (Tc = 25C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector... |
| Description |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
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| File Size |
109.91K /
3 Page |
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it Online |
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ADPOW[Advanced Power Technology]
|
| Part No. |
MS1008
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| OCR Text |
...B Conditions: f = 30 MHz POUT = 150wpep POUT = 150wpep POUT = 150wpep f = 1 MHz f1 = 30.000MHz
Test Conditions
VCE = 50V VCE = 50V VCE = 50V VCE = 50V VCB = 50 V f2 = 30.001MHz ICQ = 150mA ICQ = 150mA ICQ = 150mA ICQ = 150mA
Min.
15... |
| Description |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
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| File Size |
181.83K /
5 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD4590
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| OCR Text |
...= 900MHz VCE = 26 mA
P OUT = 150wpep VCE = 26V ICQ = 400mA
3/8
SD4590
SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES
ZIN A B
CONDITIONS: VCE = 26V ICQ = 2 X 200mA POUT = 150W PEP IMD 3 -28dBT ( f1 f2 = 100KHz)
BA ZCL
NOT... |
| Description |
RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION
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| File Size |
113.88K /
8 Page |
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it Online |
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STMicro
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| Part No. |
SD4590 2870 -SD4590
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| OCR Text |
...
PG
900mA 600mA
C
POUT = 150wpep VCE = 26V ICQ = 400mA
400mA RL IMD 300mA FREQ = 900MHz VCE = 26V
January 22, 1998
3/7
SD4590
SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES
ZIN A B
CONDITIONS: VCE = 26V ICQ = 2 x 200mA ... |
| Description |
From old datasheet system
RF & MICROWAVE TRANSISTORS 800-960 MHz CELLULAR BASE STATION
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| File Size |
129.07K /
7 Page |
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it Online |
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ST Microelectronics
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| Part No. |
SD4590
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| OCR Text |
...00ma 600ma 400ma 300ma p out = 150wpep v ce = 26v i cq = 400ma v ce = 26v i cq = 400ma sd4590 3/8
series equivalent input/output impedances freq. z in ( w )z cl ( w ) 800 mhz 4.25 + j 12.25 5.75 - j 4.25 820 mhz 4.75 + j 13.25 5.... |
| Description |
800-960 MHZ CELLULAR BASE STATION RF POWER TRANSISTORS
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| File Size |
596.71K /
8 Page |
View
it Online |
Download Datasheet |
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