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s21e2 Datasheet PDF File

For s21e2 Found Datasheets File :: 216 Search Time::1.344ms
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				Sanyo Semicon Device
Part No.	EC3H08B
OCR Text	... operating voltage. High Gain : s21e2=9.5dB typ (f=2GHz) Ultraminiature (1006 size) and thin (0.5mm) leadless package. 0.35 0.2 0.15 0.05 1 0.4 [EC3H08B] 0.15 2 1.0 0.25 3 0.5 (Bottom view) 0.25 0.05 0.05 Specific...
Description	High-Frequency Amp Applications, Osc. Applications
File Size	18.74K / 2 Page	View it Online	Download Datasheet

				SANYO
Part No.	80GN01F
OCR Text	...y : fT= 8.0GHz typ. High gain : s21e2 =12.0dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Vol...
Description	Pico-GET Series
File Size	45.42K / 8 Page	View it Online	Download Datasheet

				SANYO
Part No.	80GN01C
OCR Text	...y : fT= 8.0GHz typ. High gain : s21e2 =11.0dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipat...
Description	Pico-GET Series
File Size	45.14K / 8 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC5231A
OCR Text	...1.0dB typ (f=1GHz). High gain : s21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Coll...
Description	VHF to UHF Wide-Band Low-Noise Amplifier Applications
File Size	62.65K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC5415A
OCR Text	...ier Applications High gain : s21e2=9dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage ...
Description	High-Frequency Low-Noise Amplifier Applications
File Size	89.56K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC4853A
OCR Text	... fT=5GHz typ. (VCE=1V, IC=1mA) :s21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Curre...
Description	Low-Voltage, Low-Current High-Frequency Amplifier Applications
File Size	51.89K / 5 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	55GN01FA
OCR Text	...y : fT= 5.5GHz typ. High gain : s21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Colle...
Description	UHF Wide-band Low-noise Amplifier Applications UHF Wide-band Low-noise Amplifier Applications
File Size	50.54K / 8 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	ENA1115 55GN01SA
OCR Text	...y : fT= 5.5GHz typ. High gain : s21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltag...
Description	NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications
File Size	45.82K / 6 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SBFP420M
OCR Text	... operating voltage. High gain : s21e2=17dB typ (f=1.8GHz). 0.3 4 3 0.15 1.6 1 1.3 2.0 2 0.25 2.1 0.85 1:Collector 2:Emitter 3:Base 4:Emitter SANYO:MCPH4 Absolute Maximum Ratings at Ta=25C Parameter Collector-to- Ba...
Description	UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications
File Size	44.73K / 2 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	UPA831 UPA831TC UPA831TC-T1 UPA831TC-A
OCR Text	...RENT 14.00 Insertion Power Gain s21e2 (dB) 12.00 10.00 8.00 6.00 4.00 2.00 VCE = 3 V f = 1 GHz 16.00 Insertion Power Gain s21e2 (dB) 14.00 12.00 10.00 8.00 6.00 4.00 2.00 1 10 Collector Current IC (mA) 100 100 VCE = 3 V 7.00 f = 1 GHz 6....
Description	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
File Size	77.29K / 16 Page	View it Online	Download Datasheet

For s21e2 Found Datasheets File :: 216 Search Time::1.344ms
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