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d-953-58 Datasheet PDF File

For d-953-58 Found Datasheets File :: 294 Search Time::2.64ms
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				ZARLINK[Zarlink Semiconductor Inc]
Part No.	SL6649-1 SL6649-I SL6649-KG SL6649-MPEF SL6649-MPES SL66491-1
OCR Text	...Fig. 13. The test equipment and D.U.T. are set up as shown in Figure 11. The R.F. frequency is set to the nominal L.O. frequency of the receiver and the peak deviation is set to 4.5kHz. Care must be taken to avoid long power supply leads an...
Description	200MHz DIRECT CONVERSION FSK DATA RECEIVER
File Size	322.91K / 14 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF275 MRF275L
OCR Text	D RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ...953 0.952 0.927 0.921 0.929 0.963 0.968 0.937 0.907 0.912 0.962 0.971 0.948 0.953 -179 -177 179 179 ...
Description	N-CHANNEL BROADBAND RF POWER FET
File Size	265.53K / 13 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10053
OCR Text	...6 V, POUT = 12 W, IDQ = 155 mA D e Z Source Z Load Z0 = 50 W G S Frequency GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R Z Sour...953 0.959 0.963 0.964 0.968 0.972 0.974 0.976 0.975 0.977 Ang -80 -90 -113 -125 -134 -142 -150 -...
Description	12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
File Size	79.85K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10135
OCR Text	... Z Source Z Load TO R 0 .2 D TOW AR D GEN - WAVELE NGT HS G S 0.0 0.1 0.2 0.3 0.4 Frequency GHz 1.7 1.8 ...953 0.946 S21 Ang -58 -115.5 -128.2 -138.1 -148.6 -154.5 -159.3 -162.8 -166.9 -169.6 -173.1 -174...
Description	5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
File Size	244.79K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10137
OCR Text	...0137 Impedance Data Z Source D e Z Load Z0 = 50 W -> RA T O R -- VDD = 28 V, IDQ = 160 mA, P-1dB = 18 W G S RD G E NE ...953 0.955 0.958 0.961 0.963 0.967 0.967 0.967 0.970 0.970 0.972 0.973 0.978 0.978 0.981 0.981 0.982 ...
Description	12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
File Size	174.57K / 6 Page	View it Online	Download Datasheet

				Aplus Integrated Circuits Inc. Apuls Intergrated Circuits
Part No.	APE5208 APEXX08 APE1008 APE0508 APE1508 APE2008 APE4108 APLUSINTEGRATEDCIRCUITSINC.-APE5208 APE3108 APE6308
OCR Text	...izer, and PWM (Direct drive) or D/A current outputs, etc. The audio synthesizer contains one voice-channel and two melody-channels. Furtherm...953 1063 1059 1059 1059 1059 Y 87 87 87 247 357 467 577 Chip Size : APE1508 : 1230 um x 1848 u...
Description	LJT 66C 66#22D SKT RECP LJT 11C 11#12 SKT WALL RECP very low cost voice and melody synthesizer with 4-bits CPU. Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:19-35 RoHS Compliant: No Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:19-32 RoHS Compliant: No Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:19-66 RoHS Compliant: No
File Size	244.93K / 7 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE68618-T1 NE68619-T1 NE68630-T1 NE68639R-T1 NE68633-T1 NE686 NE68639-T1
OCR Text	...l o r e c s e c al a Ple ils: a d e t 8 6 30 NE6 8633 N E6 8 6 3 9 NE6 8639R NE6 DESCRIPTION The NE686 series of NPN epitaxial silicon tra...953 0.930 0.863 0.795 0.741 0.694 0.599 0.492 S22 ANG -4.500 -17.400 -33.800 -41.500 -59.000 -74....
Description	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR 表面贴装NPN硅高频晶体管
File Size	137.95K / 11 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	KTY85-1 KTY85-110 KTY85-120 KTY85-121 KTY85-122 KTY85-150 KTY85-151 KTY85-152
OCR Text	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D238 KTY85-1 series Silicon temperature sensors Product specification Superse...953 990 1028 1107 1190 1276 1365 1458 1554 1653 1756 1863 1917 MAX. 586 641 699 760 825 893 963 1000...
Description	Silicon temperature sensors
File Size	57.26K / 12 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	BB102M
OCR Text	...F pF pF dB dB Test Conditions I D = 200A, VG1S = VG2S = 0 I G1 = +10A, VG2S = VDS = 0 I G2 = 10A, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0...953 0.948 0.944 0.940 0.934 0.931 0.925 ANG -1.0 -3.2 -5.0 -6.7 -8.4 -10.0 -11.7 -13.4 -14.9 -16.8 -...
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
File Size	63.38K / 11 Page	View it Online	Download Datasheet

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