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  war-electrostatic danger Datasheet PDF File

For war-electrostatic danger Found Datasheets File :: 123+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 |   

    DF2S8.2S

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S8.2S
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 115.34K  /  3 Page

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    DF2S16FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S16FS
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 130.11K  /  3 Page

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    DF3A3.6FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.6FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.32K  /  3 Page

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    DF3A5.6LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 125.13K  /  3 Page

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    DF3A5.6LFE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6LFE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 131.60K  /  3 Page

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    DF3A5.6FV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6FV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 154.38K  /  3 Page

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    DF2S8.2FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S8.2FS
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.74 to 12.24; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 110.55K  /  3 Page

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    DF3A5.6FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.85 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.71K  /  3 Page

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    DF3A6.2FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 157.97K  /  3 Page

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    DF3A3.6FE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.6FE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.37 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 150.59K  /  3 Page

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