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  vds-20v Datasheet PDF File

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    STS4DPF20L 8006

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
Part No. STS4DPF20L 8006
Description DUAL P-CHANNEL 20V - 0.07 OHM - 4A SO-8 STRIPFET POWER MOSFET
DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOSFET
From old datasheet system
DUAL P-CHANNEL 20V - 0.07 OHM - 4A SO-8 STRIPFET POWER MOSFET
Dual P-CHANNEL POWER MOSFET
DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFETPOWER MOSFET 双P沟道20V 0.07欧姆- 4A条的SO - 8 STripFET⑩功率MOSFET

File Size 247.91K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR

ROHM[Rohm]
Rohm CO.,LTD.
Part No. 2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR
Description TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Low Vce(sat) Transistor (-20V, -3A)
From old datasheet system
Low VCE(sat) Transistor(低VCE(sat)晶体
Low Vce(sat) Transistor (-20V/ -3A)

File Size 99.96K  /  3 Page

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    IRFU4105Z IRFR4105Z

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFU4105Z IRFR4105Z
Description 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) 功率MOSFET(讥\u003d 55V的,的Rds(on)\u003d 24.5mohm,身份证\u003d 30A条)
Power MOSFET(Vds=55V / Rds(on)=24.5mohm / Id=30A)
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 203.46K  /  11 Page

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    IRF7460 IRF7460TR IRF7460TRPBF

IRF[International Rectifier]
Part No. IRF7460 IRF7460TR IRF7460TRPBF
Description 12 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Power MOSFET(Vdss=20V/ Id=12A)
Power MOSFET(Vdss=20V, Id=12A)
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 119.28K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. BF999
Description RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB
Silicon N-Channel MOSFET Triode

File Size 133.74K  /  5 Page

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    INFINEON[Infineon Technologies AG]
Part No. BF543
Description RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB
Silicon N-Channel MOSFET Triode

File Size 49.07K  /  5 Page

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    BCX69 BCX69-25 BCX69-16 BCX69-10

INFINEON[Infineon Technologies AG]
Part No. BCX69 BCX69-25 BCX69-16 BCX69-10
Description PNP Silicon AF Transistors 自动对焦进步党硅晶体
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
General Purpose Transistors - SOT89; VCEO=20V; hFE=85..375
General Purpose Transistors - SOT89; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT89; VCEO=20V; hFE=100..250

File Size 44.48K  /  4 Page

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    AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AMS431LAN AMS431LB AMS431LBL AMS431LBM AMS431LBM1 AMS431LBN AMS431LC AMS

Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
Part No. AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AMS431LAN AMS431LB AMS431LBL AMS431LBM AMS431LBM1 AMS431LBN AMS431LC AMS431LCL AMS431LCM AMS431LCM1 AMS431LCN
Description MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:Yes .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No
1.2V SHUNT REGULATOR

File Size 63.66K  /  7 Page

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