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  v 500v Datasheet PDF File

For v 500v Found Datasheets File :: 9918    Search Time::0.844ms    
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    50RIA40M 50RIA40S90 50RIA120 50RIA80S90M 50RIA 50RIA10 50RIA100 50RIA100M 50RIA100S90 50RIA100S90M 50RIA10M 50RIA10S90 5

IRF[International Rectifier]
Vishay Semiconductors
Part No. 50RIA40M 50RIA40S90 50RIA120 50RIA80S90M 50RIA 50RIA10 50RIA100 50RIA100M 50RIA100S90 50RIA100S90M 50RIA10M 50RIA10S90 50RIA10S90M 50RIA120M 50RIA120S90 50RIA120S90M 50RIA140 50RIA140M 50RIA140S90 50RIA160 50RIA160M 50RIA160S90 50RIA160S90M 50RIA20 50RIA20M 50RIA20S90 50RIA20S90M 50RIA40 50RIA40S90M 50RIA60 50RIA60M 50RIA60S90 50RIA60S90M 50RIA80 50RIA80M 50RIA80S90 50RIA140S90M 50RIA160MS90
OCR Text ...ion available Types up to 1600v v DRM / v RRM Stud version 50 A Typical Applications Phase control applications in converters Ligh...500v/s (Standard value) S90 = 1000v/s (Special selection) 5 - None = Stud base TO-208AC (TO...
Description 100v 50A Phase Control SCR in a TO-208AC (TO-65) package
800v 50A Phase Control SCR in a TO-208AC (TO-65) package
1000v 50A Phase Control SCR in a TO-208AC (TO-65) package
400v 50A Phase Control SCR in a TO-208AC (TO-65) package
1600v 80A Phase Control SCR in a TO-208AC (TO-65) package
1200v 50A Phase Control SCR in a TO-208AC (TO-65) package
1400v 80A Phase Control SCR in a TO-208AC (TO-65) package
600v 50A Phase Control SCR in a TO-208AC (TO-65) package
MEDIUM POWER THYRISTORS
Silicon Controlled Rectifier, 80 A, 1600 v, SCR, TO-208AC, TO-65, 2 PIN

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    ACS302-5T3 ACS302-5T3-TR

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. ACS302-5T3 ACS302-5T3-TR
OCR Text ...00v CLAMPING vOLTAGE: vCL = 600 v NOMINAL CONDUCTING CURRENT PER LINE: IT(RMS) = 0.2 A NOMINAL CONDUCTING CURRENT FOR TOTAL ARRAY: IT(RMS) = 0.4 A GATE TRIGGERING CURRENT: IGT < 5 mA SO-20 Wired package PIN-OUT 11.2cm = 2.54'' OUTP...
Description THREE LINES AC SWITCH ARRAY
THREE LINES AC SWITCH ARRAY

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2vFR
OCR Text v (R) FREDFET T-MAXTM Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R)...
Description POWER MOS v 500v 47A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM vERT 3POS PCB 电源MOS v是一个高电压N新一代通道增强型功率MOSFET

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2vR APT5010B2vRG
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achieves faster ...
Description POWER MOS v 500v 47A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

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    APT5010B2 APT5010B2FLL APT5010LFLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text ... ns MAX UNIT Amps volts v/ns ns 46 184 1.3 5 250 500 (vGS = 0v, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 1.6 5.5 15 27 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Cha...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT5010JFLL

ADPOW[Advanced Power Technology]
Part No. APT5010JFLL
OCR Text ... ns MAX UNIT Amps volts v/ns ns 44 176 1.3 5 250 500 (vGS = 0v, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 1.6 5.5 15 27 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Cha...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.49K  /  2 Page

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    APT5010JN APT5012JN APT5012

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT5010JN APT5012JN APT5012
OCR Text ...ALIZED TO = 10v @ 0.5 I [Cont.] v GS D 0 2.0 TJ = +25C 60 TJ = +125C 40 1.5 vGS=10v vGS=20v 1.0 20 TJ = +125C TJ = +25C TJ = -55C 0 2 4 6 8 10 vGS, GATE-TO-SOURCE vOLTAGE (vOLTS) FIGURE 4, TYPICAL TRANSFER CHA...
Description POWER MOS Iv 500v 48.0A 0.10 Ohm / 500v 43.0A 0.12 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH vOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET

File Size 60.42K  /  4 Page

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JvFR
OCR Text v (R) FREDFET Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also ach...
Description POWER MOS v 500v 44A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5010JVRU2

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JvRU2
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achieves faster ...
Description POWER MOS v 500v 44A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 110.72K  /  7 Page

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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JvRU3
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achieves faster ...
Description POWER MOS v 500v 44A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 111.65K  /  7 Page

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