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Infineon
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| Part No. |
SPU08P05 SPD08P05
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| OCR Text |
... Code
SPD08P05 SPU08P05
P-TO252 P-TO251
Q67000-. . . - . . . Q67000-. . . - . . .
Maximum Ratings Parameter Symbol Values Unit
...2.2 mH, Tj = 25 C
mJ
70
VGS Ptot
Gate source voltage Power dissipation
TC = 25 C
20
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| Description |
SIPMOS ? Power Transistor
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| File Size |
217.63K /
9 Page |
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njr
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| Part No. |
NJM7800
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| OCR Text |
...unction-to-Case jc 5 12.5 ja 60 TO252 125 C/W
ELECTRICAL CHARACTERISTICS (C1=0.33F, CO=0.1F, Tj=25C) Measurement is to be conducted in p...2 15 3 78 45 -0.5 5.2 6.0 50 50 4.8 68 5.0 4.2 15 3 78 45 -0.5 5.2 6.0 100 100 V mA mV mV dB V mV/C
... |
| Description |
3-TERMINAL POSITIVE VOLTAGE REGULATOR
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| File Size |
336.87K /
8 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group] Infineon
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| Part No. |
SPU23N05 SPD23N05 Q67040-S4131-A2 Q67040-S4138-A2
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| OCR Text |
... Code
SPD23N05 SPU23N05
P-TO252 P-TO251
Q67040 - S4138 - A2 Q67040 - S4131 - A2
Maximum Ratings Parameter Symbol Values Unit
...2.7 50 100
55 / 175 / 56
K/W
** when mounted on 1 " square PCB ( FR4 );for recommended foot... |
| Description |
SIPMOS Power Transistor SIPMOS ? Power Transistor
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| File Size |
147.11K /
8 Page |
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it Online |
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Infineon
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| Part No. |
SGD06N60
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| OCR Text |
...
Maximum Ratings Parameter
P-TO252
Q67040-A . . . .
Symbol
Values
Unit
Collector-emitter voltage Collector-gate voltage
R...2
V CE(sat)
4 3
5 -
Collector-emitter saturation voltage
V GE = 15 V, IC = 6 A, Tj = 25 C... |
| Description |
IGBT
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| File Size |
98.09K /
5 Page |
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it Online |
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Infineon
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| Part No. |
SPDX6N60S5 SPUX6N60S5
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| OCR Text |
...6N60S5
Package P-TO251-3-1 P-TO252
Ordering Code -
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Drain source...2.8 9 Value 600 Unit V A
Semiconductor Group
1
21/Oct/1998
Target data sheet
SPUX6N60... |
| Description |
Cool MOS TM Power Transistor
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| File Size |
84.98K /
5 Page |
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it Online |
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Infineon
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| Part No. |
SPDX7N60S5 SPUX7N60S5
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| OCR Text |
...7N60S5
Package P-TO251-3-1 P-TO252
Ordering Code -
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Drain source...2 tbd 3 0.5 10 tbd 4 A 0.1 1 tbd 100 6 nA
ID = 30 A, T j = 150 C
Zero gate voltage drain curren... |
| Description |
Cool MOS TM Power Transistor
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| File Size |
76.00K /
5 Page |
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it Online |
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Infineon
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| Part No. |
SGD04N60
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| OCR Text |
...
Maximum Ratings Parameter
P-TO252
Q67040-A . . . .
Symbol
Values
Unit
Collector-emitter voltage Collector-gate voltage
R...2.5 -
K/W
** Device on 50mm x 50 mm x 1.5 mm epoxy PCB ( FR-4 ) with 6 cm2 copper area around ... |
| Description |
IGBT
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| File Size |
98.12K /
5 Page |
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it Online |
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Price and Availability
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