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2SK2189 MA4P7102 TDA4862G C388A GSM15 2N6758 SA676DK 2SD2438
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  to-220sis Datasheet PDF File

For to-220sis Found Datasheets File :: 90    Search Time::2.063ms    
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    TOSHIBA
Part No. TK6A60W
OCR Text ...on) = 0.68 ? (typ.) by used to super junction structure : dtmos (2) easy to control gate switching (3) enhancement mode: v th = 2.7 to ...220sis 2014-01-05 rev.3.0 tk6a60w 2 5. 5. 5. 5. thermal characteristics thermal characteristi...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 239.24K  /  10 Page

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    TOSHIBA
Part No. TK6A80E
OCR Text ...) enhancement mode: v th = 2.5 to 4.0 v (v ds = 10 v, i d = 0.6 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal...220sis 2014-03-04 rev.3.0 tk6a80e 2 4. 4. 4. 4. absolute maximum ratings (note) (t absolute m...
Description Power MOSFET (N-ch 700V<VDSS)

File Size 272.27K  /  9 Page

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    TK8A25DA

Toshiba Semiconductor
Part No. TK8A25DA
OCR Text ... V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) to-220sis 1 2011-01-22 Rev.1.0 TK8A25DA 4. Absolute Maximum Ratings (Note) (Ta = 2...
Description MOSFETs Silicon N-Channel MOS (蟺-MOS顎?

File Size 230.61K  /  9 Page

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    TOSHIBA
Part No. TK16A55D
OCR Text ...) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal c...220sis 2014-01-06 rev.2.0 tk16a55d 2 5. 5. 5. 5. thermal characteristics thermal characterist...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 226.97K  /  9 Page

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    GT20J341

Toshiba Semiconductor
Part No. GT20J341
OCR Text ...: gate 2: collector 3: emitter to-220sis 2012-04-26 rev.2.0 gt20j341 2 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a a a ...
Description Discrete IGBTs Silicon N-Channel IGBT

File Size 247.43K  /  10 Page

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    TOSHIBA
Part No. TK17A65U
OCR Text ...) enhancement mode: v th = 3.0 to 5.0 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal c...220sis 2013-12-25 rev.2.0 tk17a65u 2 5. 5. 5. 5. thermal characteristics thermal characterist...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 231.36K  /  9 Page

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    TOSHIBA
Part No. TK7A60W
OCR Text ...(on) = 0.5 ? (typ.) by used to super junction structure : dtmos (2) easy to control gate switching (3) enhancement mode: v th = 2.7 to ...220sis 2014-01-05 rev.2.0 tk7a60w 2 5. 5. 5. 5. thermal characteristics thermal characteristi...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 239.50K  /  10 Page

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    TOSHIBA
Part No. TTB1020B
OCR Text ...i b = -6 ma) (3) complementary to ttd1415b 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and inte...220sis 2013-08-06 rev.2.0 ttb1020b 2 5. 5. 5. 5. electrical characteristics electrical charac...
Description Power transistor for high-speed switching applications

File Size 179.49K  /  6 Page

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    TOSHIBA
Part No. GT15J341
OCR Text ...: gate 2: collector 3: emitter to-220sis 2014-01-07 rev.2.0 gt15j341 2 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a a a ...
Description Discrete IGBT

File Size 253.39K  /  10 Page

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For to-220sis Found Datasheets File :: 90    Search Time::2.063ms    
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