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  tch Datasheet PDF File

For tch Found Datasheets File :: 14226    Search Time::2.031ms    
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    POWEREX[Powerex Power Semiconductors]
Part No. FK14KM-10
OCR Text ...mbol VDSS VGSS ID IDM IS ISM PD tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature S...
Description HIGH-SPEED SWItchING USE

File Size 59.02K  /  5 Page

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    RJK1055DPB-00-J5 RJK1055DPB-15

Renesas Electronics Corporation
Part No. RJK1055DPB-00-J5 RJK1055DPB-15
OCR Text ....08 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at l=10uh, tch = 25 ?c, rg ? 50 ? 3. tc = 25 ?c r07ds1058ej0200 (previous: rej03g...
Description 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching
100V, 23A, 17m?max. Silicon N Channel Power MOS FET Power Switching

File Size 147.93K  /  7 Page

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    RJK1051DPB-00-J5 RJK1051DPB-15

Renesas Electronics Corporation
Part No. RJK1051DPB-00-J5 RJK1051DPB-15
OCR Text ....78 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tch = 25 ?c, rg ? 50 ? 3. tc = 25 ?c this product is for the low voltage drive...
Description 100V, 15A, 39m max. Silicon N Channel Power MOS FET Power Switching
100V, 15A, 39m?max Silicon N Channel Power MOS FET Power Switching

File Size 102.15K  /  7 Page

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    RJK1028DNS RJK1028DNS-00-J5

Renesas Electronics Corporation
Part No. RJK1028DNS RJK1028DNS-00-J5
OCR Text ...2.5 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tch = 25 ?c, rg ? 50 ? 3. tc = 25 ?c r07ds0195ej0400 rev.4.00 apr 11, 2013 rjk...
Description 100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching

File Size 113.72K  /  7 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FK14KM-9
OCR Text ...mbol VDSS VGSS ID IDM IS ISM PD tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature S...
Description HIGH-SPEED SWItchING USE

File Size 53.39K  /  5 Page

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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text ...VGSS(DC) ID(DC) ID(pulse) PT PT tch Tstg -60 # 20 V V V A A W W C C A mJ -20, 0 # 20 # 80 Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current S...
Description From old datasheet system
SWItchING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ...VGSS(DC) ID(DC) ID(pulse) PT PT tch Tstg -60 # 20 V V V A A W W C C A mJ -20, 0 # 16 # 64 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current S...
Description From old datasheet system
SWItchING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...S (DC) ID (DC) ID (pulse) PT PT tch Tstg -60 - +20 -20, 0 - +20 - +80 35 2.0 150 -55 to +150 V V V A A W W C C 1.30.2 1.50.2 2.54 2.50.1 0.650.1 1. Gate 2. Drain 3. Source 123 ISOLATED TO-220 (MP-45F) Drain * f = 20 kHz, D...
Description From old datasheet system
SWItchING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ...VGSS(DC) ID(DC) ID(pulse) PT PT tch Tstg -60 m20 -20, 0 m30 m120 35 2.0 150 -55 to +150 V V V A A W W C C 123 0.7 0.1 2.54 13.5 MIN. 2.5 0.1 0.65 0.1 1. Gate 2. Drain 3. Source Drain Body Diode Source 1.3 0.2 1.5 0.2 2.54 TH...
Description From old datasheet system
MOS Field Effect Power Transistors
SWItchING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text .... Value at Ta = 25C 3. Value at tch = 25C, Rg 50 Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings -60 20 -5 -20 -5 -5 2.14 0.9 150 -55 to +150 Unit V V A A A A mJ W C C EAR* Pch* tch Tstg 2 2SJ496 Electrical...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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For tch Found Datasheets File :: 14226    Search Time::2.031ms    
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