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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
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| Part No. |
MGW12N120D
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| OCR Text |
...ONS
0.25 (0.010)
M
-Q- tbm
-T- E -B- U C
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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| File Size |
250.62K /
6 Page |
View
it Online |
Download Datasheet
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ONSEMI[ON Semiconductor]
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| Part No. |
MGW12N120D
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| OCR Text |
...ONS
0.25 (0.010)
M
-Q- tbm
-T- E -B- U L R
1 2 3
C
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
|
| File Size |
164.59K /
6 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
MOTOROLA INC MOTOROLA[Motorola, Inc]
|
| Part No. |
MGW12N120
|
| OCR Text |
...ONS
0.25 (0.010)
M
-Q- tbm
-T- E -B- U C
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4... |
| Description |
Insulated Gate Bipolar Transistor
|
| File Size |
228.81K /
6 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
ONSEMI[ON Semiconductor]
|
| Part No. |
MGW12N120
|
| OCR Text |
...ONS
0.25 (0.010)
M
-Q- tbm
-T- E -B- U L R
1 2 3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 4 DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 19.7 20.3 15.3 15... |
| Description |
Insulated Gate Bipolar Transistor N-Channel Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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| File Size |
133.06K /
5 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
MOTOROLA[Motorola, Inc]
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| Part No. |
MGW21N60ED
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| OCR Text |
...ONS
0.25 (0.010)
M
-Q- tbm
-T- E -B- U L R
1 2 3
C
4
NOTES: DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 ... |
| Description |
Insulated Gate Bipolar Transistor
|
| File Size |
148.77K /
6 Page |
View
it Online |
Download Datasheet
|
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|
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Pericom Semiconductor C... PERICOM[Pericom Semiconductor Corporation] Pericom Technology
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| Part No. |
PI5A3158ZAE PI5A3158 PI5A3158ZA
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| OCR Text |
...V VCC = 4.5V to 5.5V VCC = 2.5V tbm Break Before Make Time VCC = 3.3V VCC = 3.0V to 3.6V VCC = 4.5V to 5.5V VCC = 5.0V VCC = 3.3V TA = 25C Q Charge Injection TA = 25C & -40C to 85C 0.5 0.5 0.5 0.5 7 3 pC TA = 25C & -40C to 85C TA = 25C 3 2 ... |
| Description |
SOTINYTM Low Voltage Dual SPDT Analog Switch 2:1 Mux/DeMux Bus Switch
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| File Size |
271.70K /
7 Page |
View
it Online |
Download Datasheet
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