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For silicon-gate Found Datasheets File :: 27415 Search Time::1.343ms
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				Silicon Standard Corp.
Part No.	SSM25T03GH SSM25T03GJ
OCR Text	...B). Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or...
Description	N-channel Enhancement-mode Power MOSFET
File Size	717.39K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	0405SC-2200M
OCR Text	...hannel depletion mode class ab silicon carbide (sic) static induction transistor (sit) capable of providing 2200 watts of rf peak power f...gate) absolute maximum ratings voltage and current drain-source (v dss ) ...
Description	2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
File Size	224.98K / 5 Page	View it Online	Download Datasheet

				Isahaya Electronics Corporation
Part No.	INJ0001AX
OCR Text	silicon p-channel mosfet description outline drawing unitmm inj0001at2 inj0001am1 inj0001a is a silicon p-channel mos...gate ?source ?drain terminal connector ?gate ?source ?drain inj0001au1 inj0001ac1 eq...
Description	Silicon P-channel MOSFET
File Size	158.29K / 4 Page	View it Online	Download Datasheet

				Vishay
Part No.	AN204
OCR Text	...se the dg485 is built on a 44 v silicon-gate cmos process, rail-to-rail signal swings are possible. the power supply voltages range from 5 v to 20 v, and single-supply operation is allowed from +5 v to +40 v. the logic levels are set ...
Description	Serially-Controlled 8-Channel Analog Switch Array Simplified
File Size	66.04K / 6 Page	View it Online	Download Datasheet

				Isahaya Electronics Corporation
Part No.	INJ0002AX
OCR Text	...ric are subject to change. silicon p-channel mosfet description outline drawing unitmm inj0002at2 inj0002am1 inj0...gate ?source ?drain terminal connector ?gate ?source ?drain inj0002au1 inj0002ac1 equ...
Description	Silicon P-channel MOSFET
File Size	165.76K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M68701 68701
OCR Text	SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO OUTLINE DRAWING 60.51 57.50.5 50.41 2-R1.6+0.2 0 Dimensions in mm ...GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (...
Description	RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER / 820-851MHz / 6W / FM PORTABLE RADIO
File Size	27.98K / 3 Page	View it Online	Download Datasheet

				Digitron Semiconductors
Part No.	MAC800-5 MAC800-60 MAC800-80 MAC800-2 MAC800A-10 MAC800A-2 MAC800A-40 MAC800A-5 MAC800A-60 MAC800A-80 MAC800B-10 MAC800B-2 MAC800B-5 MAC800B-80 MAC800A-20 MAC800B-20 MAC800B-40 MAC800B-60
OCR Text	...800,(a),(b) series silicon bidirectional thyristors available non-rohs (standard) or rohs compliant (add pbf suffix). avail...gate power (t 10s) p gm 10 watts average gate power p g(av) 0.5 watts peak gate voltag...
Description	SILICON BIDIRECTIONAL THYRISTORS
File Size	217.66K / 4 Page	View it Online	Download Datasheet

				HVVi Semiconductors, Inc.
Part No.	HVV1012-060
OCR Text	... is The high power high voltage silicon enhancement mode RF high a high voltage silicon enhancement mode a transistor Thepower power HVV1012...GaTE SOUrCE Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the ri...
Description	L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Apllications L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications
File Size	705.74K / 2 Page	View it Online	Download Datasheet

				HVVi Semiconductors, Inc.
Part No.	HVV1011-035
OCR Text	...tor DESCRIPTION PaCKaGE voltage silicon enhancementavionics applications voltage silicon enhancement mode RFis The high over the frequency r...Gate-Source VV GS DSS The MIL-STD-750D, Method 1071.6, ABSOLUTE MAXIMUM Voltage 10 VDSS Drain-Source...
Description	L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50楼矛s Pulse, 5% Duty for TCAS and Mode-S Applications L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50μs Pulse, 5% Duty for TCAS and Mode-S Applications
File Size	630.54K / 2 Page	View it Online	Download Datasheet

				Central Semiconductor Corp http://
Part No.	C106D C106M C106B
OCR Text	silicon controlled rectifier 200 thru 600 volts to-126 case central semiconductor corp. tm r0 (27-april 2004) description: the central semiconductor c106b series are 4.0a, pnpn sensitive gate triggering silicon controlled rectifiers with vo...
Description	Leaded Thyristor SCR 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS
File Size	74.88K / 2 Page	View it Online	Download Datasheet

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