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  sat-2 Datasheet PDF File

For sat-2 Found Datasheets File :: 42659    Search Time::1.797ms    
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    2SA838

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SA838
OCR Text ... Symbol ICBO ICEO IEBO hFE* VCE(sat) VBE fT NF Zrb Cre Conditions VCB = -10V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 VCE = -10V, IC = -...2.8 22 1.2 4.0 50 2.0 min typ max - 0.1 -100 -10 220 V V MHz dB pF Unit A A *h FE Rank cla...
Description Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)

File Size 36.38K  /  2 Page

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
Part No. D43C D43C1 D43C10 D43C11 D43C6 D43C2 D43C8 D43C9 D43C3 D43C5 D43C7
OCR Text ...= -1a, ib = -100ma) hfe hfe vce(sat) vce(sat) vbe(sat) 25 40 40 10 20 20 ? ? ? ? ? 120 120 ? -0.5 -05 -05 -1.3 " volts volts volts dynamic c...2%. ...
Description High free-air power dissipation

File Size 693.38K  /  2 Page

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    TOSHIBA
Part No. 2SC3474
OCR Text ... low saturation voltage: v ce (sat) = 0.5 v (max) (i c = 300 ma) maximum ratings (ta = 25c) characteristics symbol rating unit col...2 a base current i b 0.5 a ta = 25c 1.0 collector power dissipation tc = 25c p c 20 w j...
Description Transistor Silicon NPN Epitaxial Type Switching Applications Solenoid Drive Applications

File Size 125.47K  /  5 Page

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    2SA879

PANASONIC[Panasonic Semiconductor]
Part No. 2SA879
OCR Text ... Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCB = -12V, IB = 0 IC = -100A, IB = 0 IE = -1A, IC = 0 VCE = -10V, IC = -5mA IC = -50...2 Unit A V V *h FE Rank classification Q 60 ~ 150 R 100 ~ 220 hFE Rank 3.2 W 1...
Description Silicon PNP epitaxial planer type

File Size 45.28K  /  3 Page

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    2SA886 2SA0886

PANASONIC[Panasonic Semiconductor]
Part No. 2SA886 2SA0886
OCR Text ...CBO VCEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = -1 mA, IE = 0 IC = -2 mA, IB = 0 VCB = -20 V, IE = 0 VCE = -10 V, IB = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 A IC = -1.5 A, IB = - 0.15 A IC = -2 A, IB = - 0.2 A VCB = ...
Description Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

File Size 89.38K  /  5 Page

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    DIM250PKM33-TL000

Dynex Semiconductor
Part No. DIM250PKM33-TL000
OCR Text ... features ? low v ce (sat) device ? 10s short circuit withstand ? high thermal cycling capability ? high current de...2.0 v i c (max) 25 0 a i c(pk) (max) 5 0 0 a * m e asured at the auxiliary te...
Description IGBT Chopper Module

File Size 319.78K  /  8 Page

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    2SA921

PANASONIC[Panasonic Semiconductor]
Part No. 2SA921
OCR Text ...BO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = -50V, IE = 0 VCE = -50V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, I...2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -50 25C Ta=75C -25C 2SA921 IC -- VCE -60 VCE=-5V IC -- VB...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

File Size 36.24K  /  2 Page

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    TOSHIBA
Part No. 2SC5588
OCR Text ... saturation voltage : v ce (sat) = 3 v (max.) high speed : t f (2) = 0.1s (typ.) maximum ratings (tc = 25c) characteristic symbol rating unit collector ? base voltage v cbo 1700 v collector ? emitter voltage v ce...
Description TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS

File Size 199.50K  /  5 Page

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    2SB1001

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1001
OCR Text ... C = -0.1 A (Pulse test) VCE(sat) VBE(sat) fT Cob V V MHz pF I C = -1 A, I B = -0.1 A (Pulse test) I C = -1 A, I B = -0.1 A (Pulse test) VCE = -2 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz 1. The 2SB1001 is grouped by hFE as...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 31.26K  /  6 Page

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    2SB1002

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1002
OCR Text ... VCE = -2 V, IC = -0.1 A VCE(sat) VBE(sat) fT Cob V V MHz pF I C = -1 A, I B = -0.1 A (Pulse test) I C = -1 A, I B = -0.1 A (Pulse test) VCE = -2 V, I C = -10 mA (Pulse test) VCB = -10 V, IE = 0, f = 1 MHz 1. The 2SB1002 is grou...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 30.84K  /  6 Page

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For sat-2 Found Datasheets File :: 42659    Search Time::1.797ms    
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