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s21e2 Datasheet PDF File

For s21e2 Found Datasheets File :: 216 Search Time::0.656ms
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				NEC Corp. NEC[NEC]
Part No.	UPA804TC UPA804 UPA804TC-T1 PA804TC
OCR Text	...ENT 14.00 Insertion Power Gain s21e2 (dB) 6.00 5.00 4.00 3.00 2.00 1.00 0.00 1 VCE = 5 V f = 1 GHz 12.00 10.00 8.00 6.00 4.00 2.00 0.00 VCE = 5 V f = 1 GHz 10 Collector Current IC (mA) 100 1 10 Collector Current IC ...
Description	NPN Epitaxial Transisitor(NPN澶?欢?朵?绠? NPN Epitaxial Transisitor(NPN外延晶体 NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
File Size	63.88K / 16 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	UPA843TC UPA843TC-T1
OCR Text	... gain transistor fT = 13.5 GHz, s21e2 = 10.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz, s21e2 = 4.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz BUILT-IN TRANSISTORS ...
Description	NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
File Size	73.64K / 12 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC4092 2SC4092R4 2SC4092RD 2SC4092R5 2SC4092-T1 2SC4092-T2
OCR Text	....0 GHz, VCE = 10 V, IC = 5 mA * s21e2 = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Di...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits BJT For amplify high frequency and low noise.
File Size	80.70K / 8 Page	View it Online	Download Datasheet

				NEC
Part No.	2SC4092
OCR Text	....0 GHz, VCE = 10 V, IC = 5 mA * s21e2 = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Di...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
File Size	90.64K / 9 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	MCH4013
OCR Text	... operating voltage. High gain : s21e2=16dB typ (f=2GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipatio...
Description	NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier and OSC Applications
File Size	36.95K / 3 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA821 UPA821TC UPA821TC-T1
OCR Text	...ENT 14.00 Insertion Power Gain s21e2 (dB) 6.00 5.00 4.00 3.00 2.00 1.00 0.00 VCE = 3 V f = 1 GHz 12.00 10.00 8.00 6.00 4.00 2.00 VCE = 3 V f = 1 GHz 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (m...
Description	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
File Size	62.45K / 12 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SC5540
OCR Text	...y : fT=10GHz typ. * High gain : s21e2=13dB typ (f=1GHz). * Low noise : NF=1.3dB typ (f=1GHz). * Small Cob : Cob=0.4pF typ. * Ultrasmall, slim flat-lead package. (1.4mm x 0.8mm x 0.6mm) Package Dimensions unit:mm 2159 [2SC5540] 1.4 ...
Description	UHF to S Band Low-Noise Amplifier and OSC Applications
File Size	29.69K / 3 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC5665
OCR Text	...rd Transfer Gain, S21e -- dB s21e2 -- IC f=1GHz 2 Forward Transfer Gain, S21e -- dB 12 s21e2 -- IC f=2GHz 14 3V V CE= 10 1V 12 V CE=3V 8 1V 6 10 8 4 6 4 2 1.0 2 2 3 5 7 10 ...
Description	High-Frequency Low-Noise Amplifier and OSC Applications
File Size	36.35K / 7 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	CPH6002
OCR Text	... 25 600 VCE(sat) -- IC s21e2 -- IC 5 7 1000 IT10485 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 500 VCE=5V Forward Transfer Gain, s21e2 -- dB 20 f=200M Hz 400 15 300 500MHz ...
Description	NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Power Amplifier Applications
File Size	24.58K / 3 Page	View it Online	Download Datasheet

				SANYO
Part No.	2SC5540
OCR Text	...y : fT=10GHz typ. * High gain : s21e2=13dB typ (f=1GHz). * Low noise : NF=1.3dB typ (f=1GHz). * Small Cob : Cob=0.4pF typ. * Ultrasmall, slim flat-lead package. (1.4mm x 0.8mm x 0.6mm) Package Dimensions unit:mm 2159 [2SC5540] 1.4 ...
Description	NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications
File Size	35.70K / 4 Page	View it Online	Download Datasheet

For s21e2 Found Datasheets File :: 216 Search Time::0.656ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |