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  rg-62 u Datasheet PDF File

For rg-62 u Found Datasheets File :: 3185    Search Time::1.312ms    
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    SSP7N60 SSP7N60B SSS7N60B

FAIRCHILD[Fairchild Semiconductor]
Samsung semiconductor
Part No. SSP7N60 SSP7N60B SSS7N60B
OCR Text ... 5) VDD = 300 V, ID = 7.0 A, RG = 25 (Note 4, 5) -------- 30 80 125 85 38 6.4 15 70 170 260 180 50 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dr...
Description 600V N-Channel MOSFET

File Size 912.76K  /  11 Page

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    IRL2505PBF

International Rectifier
Part No. IRL2505PBF
OCR Text ... VDD = 28V 160 ID = 54A ns 43 RG = 1.3, VGS = 5.0V 84 RD = 0.50, See Fig. 10 Between lead, 7.5 nH and center of die contact 5000 VGS =...62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions ...
Description HEXFET Power MOSFET

File Size 217.24K  /  8 Page

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    STP20NF20

STMicroelectronics
Part No. STP20NF20
OCR Text ... - VDD = 100 V, ID = 10 A, RG= 4.7 VGS = 10 V (see Figure 15) VDD = 160 V, ID = 20 A, VGS = 10 V (see Figure 16) - - 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. 4/15 Doc ID 13154 Rev 4 www.DataSheet.in ST...
Description N-channel Power MOSFET

File Size 913.87K  /  15 Page

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    IRF640N04 IRF640NS IRF640N IRF640NL

IRF[International Rectifier]
Part No. IRF640N04 IRF640NS IRF640N IRF640NL
OCR Text ... VDD = 100V --- ID = 11A ns --- RG = 2.5 --- RD = 9.0, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of di...62 40 units C/W www.irf.com 2 IRF640N/S/L 100 I D , Drain-to-Source Current (A) ...
Description HEXFET Power MOSFET

File Size 237.17K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60_05 FCB20N60 FCB20N6005
OCR Text ..., VGS = 0V VDD = 300V, ID = 20A RG = 25 Switching Characteristics --------- VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current...
Description    600V N-Channel MOSFET

File Size 999.60K  /  8 Page

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    Lii Semiconductor
Part No. LA8100PN
OCR Text ...f ? ? y?l ^rg ? T ? vthdt ?? 3.0 3.3 v ?? 0.1 v `? ]h ? 0.5~3.5v 65 db ?l 0db ...62 0.65 0.68 v uvp ?rrg td.uvp 200 350 480 ms _P ( ps-on ) ps-on ? ? vremh ...
Description High-performance PC ATX power supply controller IC

File Size 422.49K  /  10 Page

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    IRL530 IRL530N

IRF[International Rectifier]
Part No. IRL530 IRL530N
OCR Text ... 50V 53 --- ID = 9.0A ns 30 --- RG = 6.0, VGS = 5.0V 26 --- RD = 5.5, See Fig. 10 Between lead, --- 4.5 --- nH 6mm (0.25in.) G from package...62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) ...
Description HEXFET Power MOSFET

File Size 189.98K  /  8 Page

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    IRL2203NPBF

International Rectifier
Part No. IRL2203NPBF
OCR Text ... --- VDD = 15V --- ID = 60A --- RG = 1.8 --- VGS = 4.5V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cent...62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions ...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 176.70K  /  8 Page

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    ST Microelectronics
Part No. LCP1521SRL
OCR Text ...se leakage current line / gnd i rg reverse leakage current gate / line v rm reverse voltage line / gnd v gt gate triggering voltage v f forw...62 ? 5 9 30 v note 1: see test circuit for v fp ; r s is the protection resistor located on the l...
Description PROGRAMMABLE TRANSIENT VOLTAGE SuPPRESSOR FOR SLIC PROTECTION

File Size 113.90K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FCPF7N60 FCP7N60 FCP7N60_0507
OCR Text ...V, VGS = 0V VDD = 300V, ID = 7A RG = 25 Switching Characteristics --------- VDS = 480V, ID = 7A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current ...
Description 600V N-Channel MOSFET

File Size 1,188.21K  /  10 Page

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