rg-55 u pdf Datasheet P9 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : AT1366 OM6001ST 0FB10 NJM2399 BY722 G456N 61RFKE3 BUX98AF
	Product Description
	Full Text Search

rg-55 u Datasheet PDF File

For rg-55 u Found Datasheets File :: 11355 Search Time::1.672ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				NEC Corp.
Part No.	NP48N055KLE NP48N055KLE-E1-AY NP48N055KLE-E2-AY NP48N055ELE NP48N055ELE-E1-AY NP48N055ELE-E2-AY NP48N055DLE NP48N055DLE-S12-AY NP48N055CLE NP48N055CLE-S12-AZ NP48N055MLE NP48N055MLE-S18-AY NP48N055NLE-S18-AY
OCR Text	...ycle 1% 2. Starting Tch = 25C, RG = 25 , VGS = 20 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to...55 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 10 V, ID = 24 A VGS = 10 V, ID = 2...
Description	48 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
File Size	209.20K / 10 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	NP80N055KLE NP80N055KLE-E1-AY NP80N055KLE-E2-AY NP80N055ELE-E1-AY NP80N055ELE-E2-AY NP80N055CLE-S12-AZ NP80N055MLE NP80N055MLE-S18-AY NP80N055DLE-S12-AY NP80N055NLE-S18-AY NP80N055ELE
OCR Text	...Starting Tch = 25C, VDD = 28 V, RG = 25 , VGS = 200 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to A...55 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 10 V, ID = 40 A VGS = 10 V, ID = 4...
Description	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET MOS场效应晶体管的开关N沟道功率场效应晶体管
File Size	214.19K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	...DD = -28V --- ID = -7.2A ns --- RG = 24 --- RD = 3.7, See Fig. 10 Between lead, nH 7.5 and center of die contact 350 --- VGS = 0V 170 --- p...55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	...D = -28V --- I D = -7.2A ns --- RG = 24 --- RD = 3.7, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings an...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	NP82N055KLE NP82N055KLE-E1-AY NP82N055KLE-E2-AY NP82N055ELE NP82N055ELE-E1-AY NP82N055ELE-E2-AY NP82N055DLE NP82N055DLE-S12-AY NP82N055CLE NP82N055CLE-S12-AZ NP82N055MLE NP82N055MLE-S18-AY NP82N055NLE-S18-AY
OCR Text	...Starting Tch = 25C, VDD = 28 V, RG = 25 , VGS = 20 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to...55 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 10 V, ID = 41 A VGS = 10 V, ID = 4...
Description	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET MOS场效应晶体管的开N沟道功率场效应晶体管 MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET MOS场效应晶体管的开关N沟道功率场效应晶体管
File Size	214.25K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	... Starting TJ = 25C, L = 3.6mH RG = 25, I AS = -10A. (See Figure 12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material )....55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) MINIMuM RECO MM ENDED F OO TP RINT 11.43 (.450) ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	...DD = -28V --- I D = -10A ns --- RG = 13 --- RD = 2.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings an...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC, Corp.
Part No.	NP82N055MHE NP82N055MHE-S18-AY NP82N055CHE07 NP82N055NHE-S18-AY NP82N055CHE-S12-AZ NP82N055DHE NP82N055DHE-S12-AY NP82N055EHE NP82N055EHE-E1-AY NP82N055EHE-E2-AY NP82N055KHE-E1-AY NP82N055KHE-E2-AY NP82N055CHE
OCR Text	...Starting Tch = 25C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to...55 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 10 V, ID = 41 A VGS = 10 V, ID = 4...
Description	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET MOS场效应晶体管的开关N沟道功率场效应晶体管
File Size	202.60K / 10 Page	View it Online	Download Datasheet

For rg-55 u Found Datasheets File :: 11355 Search Time::1.672ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |