rg-210 u pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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rg-210 u Datasheet PDF File

For rg-210 u Found Datasheets File :: 1420 Search Time::2.062ms
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				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STH10NA50 STH10NA50FI STW10NA50
OCR Text	... (V GS = 0) Drain-gate Voltage (RG S = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c ...210 0.130 0.114 0.074 0.017 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 ...
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N-CHANNEL Power MOS MOSFET
File Size	241.67K / 11 Page	View it Online	Download Datasheet

				ANPEC[Anpec Electronics Coropration] ETC[ETC] ANPEC Electronics Corporation
Part No.	APM7313 APM7317KCTu APM7317KCTR APM7313KC-TR
OCR Text	... VDD=15V , IDS=2A , VGEN=10V , RG=6 VGS=0V 17 37 20 1200 210 95 ns VDS=25V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to...
Description	30 V, N-channel dual enhancement mode MOSFET Dual N-Channel Enhancement Mode MOSFET
File Size	110.51K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLu3103 IRLR3103
OCR Text	... VDD = 15V --- I D = 34A ns --- RG = 3.4, VGS = 4.5V --- RD = 0.43, See Fig. 10 Between lead, --- 4.5 --- 6mm (0.25in.) nH from package ---...210 310 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) M...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A? Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A) Power MOSFET(Vdss=30V Rds(on)=0.019ohm Id=46A) Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A?)
File Size	161.75K / 10 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	2SK3367 2SK3367-Z D14257EJ1V0DS00
OCR Text	... A, VGS(on) = 10 V, VDD = 15 V, RG = 10 TEST CONDITIONS VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 18 A VGS = 4.0 V, ID = 18 A VDS = 10 V, ID ...210 49 10 14 0.95 45 50 1.5 13 MIN. TYP. 7.3 9.0 9.7 2.0 26 10 10 MAX. 9.0 12.0 14.0 2.5 uNIT m m m ...
Description	RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 5K/AMMO 开关N沟道功率场效应晶体管工业 SWITCHING N-CHANNEL POWER MOS FET INDuSTRIAL uSE From old datasheet system
File Size	81.80K / 8 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	2SK3397
OCR Text	...initial), L = 40 H, IAR = 70 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an...210 -1.7 unit A A V ns nC Marking Lot Number K3397 Type Month (starting from alphabet A)...
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (u-MOS)
File Size	94.99K / 3 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	FMC7G50uS60
OCR Text	...nC nC VCC = 300 V, IC = 50A, RG = 5.9, VGE = 15V Inductive Load, TC = 25C VCC = 300 V, IC = 50A, RG = 5.9, VGE = 15V Inductive Load, TC = 125C @ TC = VCC = 300 V, VGE = 15V 100C VCE = 300 V, IC = 50A, VGE = 15V (c)2001 Fai...
Description	IGBT Compact & Complex Module Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
File Size	666.01K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA90N08 QA90N08
OCR Text	...4, 5) VDD = 40 V, ID = 90 A, RG = 25 (Note 4, 5) -------- 30 360 100 160 84 17 42 70 730 210 330 110 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous ...
Description	80V N-Channel MOSFET
File Size	674.45K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	uPA1811 uPA1811GR-9JG D11820EJ1V0DS00
OCR Text	... V ID = -2.0 A VGS(on) = -4.0 V RG = 5 VDD = -10 V ID = -4.0 A VGS = -4.0 V IF = 4.0 A, VGS = 0 V IF = 4.0 A, VGS = 0 V di/dt = 100 A/S -0.5 2.5 -0.9 6.8 42 46 73 1160 680 210 40 100 90 60 36 5 16 0.74 77 69 75 80 120 MIN. TYP. MAX. -10 10...
Description	4 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET POWER, TSSOP-8 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING From old datasheet system
File Size	66.24K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	2N6027 2N6028 2N6027RL1G 2N6027RLRAG 2N6027RLRM 2N6027RLRA 2N6027RLRP 2N6027RL1 2N6027G 2N6028G 2N6028RLRAG 2N6028RLRMG 2N6028RLRPG 2N6028RLRA 2N6028RLRM 2N6028RLRP 2N6027-D
OCR Text	...t Voltage -- 0.35 Volt Typical (RG = 10 k ohms) * Device Marking: Logo, Device Type, e.g., 2N6027, Date Code MAXIMuM RATINGS (TJ = 25C unle...210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- ...
Description	Programmable unijunction Transistor Programmable uJT
File Size	148.85K / 8 Page	View it Online	Download Datasheet

				ANPEC[Anpec Electronics Coropration] ETC[ETC] Anpec Electronics Corporation Anpec Electronics, Corp.
Part No.	APM3023N APM3023NFC-TR APM3023NuC-TR APM3023NVC-TR
OCR Text	... VDD=15V , IDS=2A , VGEN=10V , RG=6 VGS=0V 17 37 20 1200 220 100 ns VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz pF ...210 0.420 0.055 0.270 0.115 0.580 0.250 0.161 0.135 Copyright ANPEC Electronics Corp. Rev. A.6 -...
Description	N-Channel Enhancement Mode MOSFET N沟道增强型MOS
File Size	202.19K / 12 Page	View it Online	Download Datasheet

For rg-210 u Found Datasheets File :: 1420 Search Time::2.062ms
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