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  rg-195 u Datasheet PDF File

For rg-195 u Found Datasheets File :: 624    Search Time::1.656ms    
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    MG200J6ES61 MG200F6ES61

POWEREX[Powerex Power Semiconductors]
Part No. MG200J6ES61 MG200F6ES61
OCR Text ...C = 300V, IC = 200A, VGE = 15V, RG = 10 VGE = 20V, VCE = 0V VGE = 0V, VCE = 600V VCE = 5V, IC = 200mA VGE = 15V, IC = 200A, Tj = 25C VGE = 1...195 -- units k K C/Watt C/Watt C/Watt Recommended Conditions for use Characteristic Supply Volta...
Description Six IGBTMOD⑩ Compact IGBT Series Module 200 Amperes/600 Volts

File Size 176.49K  /  4 Page

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    FMS7G20US60

FAIRCHILD[Fairchild Semiconductor]
Part No. FMS7G20uS60
OCR Text ...r Charge VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C ------------10 ---65 100 80 100 0.45 0.42 70 100 110 210 0.5 0....195 -- units V ns A nC Electrical Characteristics of DIODE @ Converter T Symbol VFM IRRM Para...
Description 600V, 20A IGBT Module (Compact & Complex Type)
Compact & Complex Module

File Size 898.79K  /  9 Page

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    FMS7G20US60S

Fairchild Semiconductor
Part No. FMS7G20uS60S
OCR Text ...GE = 15V VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC ...195 -- units V ns A nC Electrical Characteristics of DIODE @ Converter T Symbol VFM IRRM ...
Description Compact & Complex Module

File Size 777.55K  /  10 Page

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    FMS6G20US60

Fairchild Semiconductor Corporation
Part No. FMS6G20uS60
OCR Text ...GE = 15V VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC ...195 -- units V ns A nC Electrical Characteristics of DIODE @ Converter T Symbol VFM IRRM ...
Description Compact & Complex Module

File Size 775.93K  /  10 Page

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    FMS6G20US60S

Fairchild Semiconductor
Part No. FMS6G20uS60S
OCR Text ...GE = 15V VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC ...195 -- units V ns A nC Electrical Characteristics of DIODE @ Converter T Symbol VFM IRRM ...
Description Compact & Complex Module

File Size 776.82K  /  10 Page

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    2SJ448

NEC[NEC]
Part No. 2SJ448
OCR Text ...rain ** Starting Tch = 25 C, RG = 25 , VGS = -20 V 0 Gate Body Diode Gate Protection Diode Source Document No. D10029EJ1V0DS...195 760 -4.0 1.0 MIN. TYP. 1.5 -4.8 2.3 -100 m10 MAX. 2.0 -5.5 uNIT V S TEST CONDITIONS V...
Description SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE

File Size 117.41K  /  8 Page

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    FQP33N10

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP33N10
OCR Text ...4, 5) VDD = 50 V, ID = 33 A, RG = 25 (Note 4, 5) -------- 15 195 80 110 38 7.5 18 40 400 170 230 51 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous D...
Description 100V N-Channel MOSFET

File Size 572.96K  /  8 Page

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    MG200J6ES60

Toshiba Semiconductor
Part No. MG200J6ES60
OCR Text ...= 300 V, IC = 200 A VGE = 15 V, RG = 10 W (Note 1) Test Condition VGE = 20 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 200 mA VGE = 15 V...195 3/4 C/W unit kW K 3 2002-01-24 MG200J6ES60 Switching Time Test Circuit & Timing Chart ...
Description TOSHIBA GTR Module Silicon N Channel IGBT

File Size 90.09K  /  5 Page

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    FQB19N10L FQI19N10L FQB19N10LTM

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQB19N10L FQI19N10L FQB19N10LTM
OCR Text ...4, 5) VDD = 50 V, ID = 19 A, RG = 25 (Note 4, 5) -------- 14 410 20 140 14 2.9 9.2 38 830 50 290 18 --- ns ns ns ns nC nC n...195 19 76 1.5 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum j...
Description 100V Logic N-Channel MOSFET(漏源电压00V的逻辑N沟道增强型MOS场效应管) 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
100V N-Channel Logic Level QFET

File Size 608.39K  /  9 Page

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