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L78L05 20113 IMB5A 2SA1977 EL7531 EL7531 250126 4FCT2
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For rg u Found Datasheets File :: 14242    Search Time::1.641ms    
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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...VDD = -50V --- ID = -11A ns --- rg = 5.1 --- RD = 4.2, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...u LS E W ID TH T C = 1 75 C 0.1 1 10 -4.5 V 1 0.1 1 20 s P u L S E W ID TH T c = 25 C A 10...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...VDD = -50V --- ID = -11A ns --- rg = 5.1 --- RD = 4.2, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...u LS E W ID TH T J = 1 75 C C 0.1 1 10 -4 .5V 1 0.1 1 2 0 s P u LS E W ID TH T J = 2 5C c A ...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...N-Channel VDD = 10V, ID = 1.0A, rg = 6.0, RD = 10 ns P-Channel VDD = -10V, ID = -1.0A, rg = 6.0, RD = 10 N-Channel V GS = 0V, VDS = 15V, = ...u rce Cu rre n t (A ) 10 I D , Dra in-to -S o u rce Cu rre n t (A) VGS 15V 10V 7.0V 5.5V 4....
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ... -10V 14 28 ID = -1.0A ns 20 40 rg = 6.0 6.9 14 RD = 10 190 --- VGS = 0V 120 --- pF VDS = -15V 61 --- = 1.0MHz, See Fig. 5 Source-Drain...u rce C u rre n t (A ) 10 -I D , D ra in -to -S o u rc e C u rre n t (A ) VGS - 15V - 10V -...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...12 VDD = 10V 18 ID = 1.0A ns 26 rg = 6.0 6.0 RD = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Ch...u rce Cu rre n t (A ) 10 I D , Dra in-to -S o u rce Cu rre n t (A) VGS 15V 10V 7.0V 5.5V 4....
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...D = -30V --- I D = -6.7A ns --- rg = 24 --- RD = 4.0, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 270 --- VGS = 0V 170 -...u.T* + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakag...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...-30V 68 --- ID = -11A ns 15 --- rg = 18 29 --- RD = 2.5, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 570 --- VGS = 0V 36...u.T* + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakag...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...DD = -28V --- ID = -7.2A ns --- rg = 24 --- RD = 3.7, See Fig. 10 Between lead, nH 7.5 and center of die contact 350 --- VGS = 0V 170 --- p...u LS E W ID TH TJ 25C T c = 2 5C 100 -ID , D rain-to-S ou rc e C urre nt (A ) 10 -ID , D...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...D = -28V --- I D = -7.2A ns --- rg = 24 --- RD = 3.7, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die c...u rce C u rre n t (A ) 10 -ID , D ra in -to -S o u rc e C u rre n t (A ) VGS - 15V - 10V - ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...VDD = -30V --- ID = -18A ns --- rg = 12 --- RD = 1.5, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = ...u.T* + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakag...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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