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SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
ILH200
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| OCR Text |
...ation Delay - s
Vcc = 5.25V, rbe = open, Vth = 1.5V 47K tpLH
10
5 mA 1 mA
100 10K tpLH 2.2K tpLH 10 2.2K tpHL 1 -50 10K tpHL 47K tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - C 125
10 mA
20 mA 30 mA 60 mA
1
0.5 ... |
| Description |
From old datasheet system
HERMETIC PHOTOTRANSISTOR DUAL CHANNEL OPTOCOUPLER
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| File Size |
76.91K /
4 Page |
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it Online |
Download Datasheet
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Philips
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| Part No. |
BU4507DX
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| OCR Text |
...URATION
case
SYMBOL
c b
rbe
case isolated
123
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitt... |
| Description |
Silicon Diffused Power Transistor
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| File Size |
41.45K /
6 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MOC8204
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| OCR Text |
...Breakdown Voltage (IC = 1.0 mA, rbe = 1M!) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Dark Current TA = 25C TA = 100C (rbe = 1M!, VCE = 300 V) ICEO -- -- -- -- 100 250 nA A (IC = 100 A) (IE = 100 A) Te... |
| Description |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
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| File Size |
113.78K /
6 Page |
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it Online |
Download Datasheet |
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Hitachi Semiconductor
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| Part No. |
2SD2256
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| OCR Text |
...C = 0.1 mA, IE = 0 I C = 25 mA, rbe = I C = 200 mA, rbe = I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, rbe = VCE = 4 V, IC = 12 A*1 VCE = 4 V, IC = 25 A*1 I C = 12 A, IB = 24 mA*1 I C = 25 A, IB = 250 mA*1 I C = 12 A, IB = 24 mA*... |
| Description |
Silicon NPN Darlington Transistor
SILICON NPN TRIPLE DIFFUSED
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| File Size |
32.11K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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