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BC1402 ISL22346 780964 C4AKFA SAB6456T ML74WL00 HEE102 N4001
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  r.f.medium Datasheet PDF File

For r.f.medium Found Datasheets File :: 7485    Search Time::8.015ms    
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    Mitsubishi Electric Sem...
Part No. QM30HY-2H
OCR Text ... (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter r...
Description    MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 70.39K  /  5 Page

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    HAL584UA-E HAL584UA-K HAL574UA-K HAL573UA-E HAL575UA-E

Micronas
Part No. HAL584UA-E HAL584UA-K HAL574UA-K HAL573UA-E HAL575UA-E
OCR Text ...nce information micr onas m i c r o n a s hal57x, hal58x advance information 2 micronas contents page section title 3 1. introduction 3 1....f osc . shunt protection devices clamp voltage peaks at the v dd -pin together with external series ...
Description Two-wire hall effect sensor (145 kHz)

File Size 180.88K  /  20 Page

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    A22-TN A22-HA A22-HY A22-TG-11A A22-HB A22-HG A22-HR A22-HW

Omron Electronics LLC
Part No. A22-TN A22-HA A22-HY A22-TG-11A A22-HB A22-HG A22-HR A22-HW
OCR Text ...(2) (3) (4) (5) (6) a22 l - t r - 12a - 10 m (2) flange shape non-lighted lighted code description f round flat tp r o j e c t e d g full-guard h half-guard c square projected d full-guard s round mushroom small (30 dia.) m mushroom medi...
Description Install in 22-dia. or 25-dia. Panel Cutout (When Using a Ring)

File Size 1,250.58K  /  36 Page

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    Mitsubishi Electric Sem...
Part No. QM30HA-H
OCR Text ... (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter r...
Description    MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 60.57K  /  5 Page

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    M/A-COM Technology Solu...
Part No. MADS-001339-12790T MA4E1339A1-1146T
OCR Text ... total capacitance (c t ) v r = 0 v , f = 1 mhz 1.2 pf max . reverse leakage current (i r ) v r = 15 v 2 00 na max. reverse voltage breakdown (v b ) i r = 10 a 20 v min . 1. operation of this devi...
Description Silicon Medium Barrier Schottky Diodes
   Silicon Medium Barrier Schottky Diodes

File Size 640.39K  /  6 Page

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    CM20TF-12H

Mitsubishi Electric Semiconductor
Part No. CM20TF-12H
OCR Text ...AB #250, t = 0.8 G N F R P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-co...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 49.88K  /  4 Page

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    SKM150GB17E4GH16

Semikron International
Part No. SKM150GB17E4GH16
OCR Text ...10 1.20 v t j =150c 1.00 1.10 v r ce v ge =15v chiplevel t j =25c 5.7 7.1 m t j =150c 8.6 9.6 m v ge(th) v ge =v ce , i c = 5.6 ma 5.2 5.8...f=1mhz 11.0 nf c oes f=1mhz 0.46 nf c res f=1mhz 0.36 nf q g v ge = - 8 v...+ 15 v 1200 nc r gint t ...
Description    IGBT4 Modules

File Size 560.61K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. TRA3225 TRA3225-D TRA3225/D
OCR Text ...ttp://onsemi.com 3 TRA3225 r(t), TRANSIENT THERMAL RESISTANCE 100 RqJC(t) = RqJC * r(t) Note 1 10-1 10-2 0.1 1 10 t, TIME (ms) 10...f, FREQUENCY (kHz) 100 Figure 10. Rectification Waveform Efficiency RECTIFICATION EFFICIENCY N...
Description Medium-Current Silicon Rectifier 中等电流硅整
Medium - Current Silicon Rectifier

File Size 71.20K  /  8 Page

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