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Mitsubishi Electric Sem...
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| Part No. |
QM30HY-2H
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| OCR Text |
... (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter r... |
| Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
70.39K /
5 Page |
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Mitsubishi Electric Sem...
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| Part No. |
QM30HA-H
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| OCR Text |
... (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter r... |
| Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
60.57K /
5 Page |
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it Online |
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M/A-COM Technology Solu...
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| Part No. |
MADS-001339-12790T MA4E1339A1-1146T
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| OCR Text |
... total capacitance (c t ) v r = 0 v , f = 1 mhz 1.2 pf max . reverse leakage current (i r ) v r = 15 v 2 00 na max. reverse voltage breakdown (v b ) i r = 10 a 20 v min . 1. operation of this devi... |
| Description |
Silicon Medium Barrier Schottky Diodes Silicon Medium Barrier Schottky Diodes
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| File Size |
640.39K /
6 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
TRA3225 TRA3225-D TRA3225/D
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| OCR Text |
...ttp://onsemi.com
3
TRA3225
r(t), TRANSIENT THERMAL RESISTANCE 100
RqJC(t) = RqJC * r(t) Note 1 10-1
10-2 0.1 1 10 t, TIME (ms) 10...f, FREQUENCY (kHz) 100
Figure 10. Rectification Waveform Efficiency
RECTIFICATION EFFICIENCY N... |
| Description |
Medium-Current Silicon Rectifier 中等电流硅整 Medium - Current Silicon Rectifier
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| File Size |
71.20K /
8 Page |
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