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  oxide-nitride Datasheet PDF File

For oxide-nitride Found Datasheets File :: 132    Search Time::1.719ms    
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    100200-4Z50-2

Anaren Microwave
Part No. 100200-4Z50-2
OCR Text ...num Nitride (AlN) and Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating 90 degree hybrid, direction...
Description Surface Mount Termination 10 Watts, 50W

File Size 265.00K  /  2 Page

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    RFP-100200A25Z50

Anaren Microwave
Part No. RFP-100200A25Z50
OCR Text ...num Nitride (AlN) and Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating 90 degree hybrid, direction...
Description Surface Mount Termination 10 Watts, 50ohm

File Size 278.75K  /  2 Page

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    DS1204

Maxim Integrated Products
Part No. DS1204
OCR Text ...Transistors: Interconnect: Gate Oxide Thickness: OPERATING LIFE DESCRIPTION INFANT LIFE HIGH VOLTAGE LIFE INFANT LIFE HIGH VOLTAGE LIFE IN...Nitride 100 x 82 Unknown Aluminum / 1% Silicon / 0.5% Copper 250 A , 1000 HRS 48 HRS 1000 H...
Description Rev F1 Dallas Semiconductor

File Size 18.93K  /  6 Page

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    MPLUSE[M-pulse Microwave Inc.]
Part No. MP4T64539 MP4T645 MP4T64500 MP4T64533 MP4T64535
OCR Text ...xide, commonly known as thermal oxide, and silicon nitride to produce v ery low 1/f noise in both amplifiers and oscillators. Micro-X Specification Subject to Change Without Notice M-Pulse Microwave___________________________________...
Description Silicon Bipolar High fT Low Noise Microwave Transistors

File Size 97.46K  /  8 Page

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    Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Part No. DS1808
OCR Text oxide-nitride 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N+ESD,TEOS Spacer, Gate Ox Thickness: Cf: Ea: : 225 A 60% 0.7 0 Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Te...
Description Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS oxide-nitride 双路对数数字电位
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS oxide-nitride

File Size 10.46K  /  1 Page

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    Metelics
Part No. SMSCQ-XX00
OCR Text ...metallized chip silicon nitride/oxide passivation low series resistance low capacitance wide dynamic range specials are available upon request. description/applications these schottky diodes are specifically designed for commercial applicat...
Description (SMSxQ-xx00) Surface Mount Schottky Diode

File Size 112.40K  /  2 Page

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    Aptina Imaging Corporation
Part No. MT9M012
OCR Text ...? nitride over 6.0k? of undoped oxide ? passivation openings (min): 75m x 90m order information mt9m012d00stm die database ? die outline, see figure 2 on page 11 ? singulated die size ? 6,748m 25m x 6,351m 25m ? bond pad identification tabl...
Description 1.6Mp CMOS Digital Image Sensor Die

File Size 551.03K  /  13 Page

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    COMCHIP[Comchip Technology]
Part No. 6KA24
OCR Text ...94V-0 Exclusive patented PAR(R) oxide passivated chip construction Low incremental surge resistance Ideally suited for automotive "load dump...nitride passivated die Terminals: Axial leads solderable per MIL-STD-750, Method 2026 Polarity: Colo...
Description Automotive Transient Voltage Supressor

File Size 57.28K  /  2 Page

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    Comchip Technology Co., Ltd.
COMCHIP[Comchip Technology]
Part No. 6K24-G
OCR Text ...94V-0 Exclusive patented PAR(R) oxide passivated chip construction Low incremental surge resistance Ideally suited for automotive "load dump...nitride passivated die Terminals: Axial leads solderable per MIL-STD-750, Method 2026 Polarity: Colo...
Description Automotive Transient Voltage Suppressor

File Size 239.45K  /  2 Page

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    ARF1519

Advanced Power Technology
Part No. ARF1519
OCR Text ...s beryllium oxideBeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic waste. 4 1 2 3 4 D...
Description RF POWER MOSFET

File Size 119.15K  /  4 Page

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For oxide-nitride Found Datasheets File :: 132    Search Time::1.719ms    
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