| |
|
 |
ST Microelectronics
|
| Part No. |
STB6NA80
|
| OCR Text |
...epetitive avalanche data at 100 o c n low intrinsic capacitances n gate charge minimized n reduced threshold voltage spread n through-hole ...d drain current (continuous) at t c = 25 o c 5.7 a i d drain current (continuous) at t c = 100 o... |
| Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
| File Size |
369.81K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
ST Microelectronics
|
| Part No. |
STB5NA80
|
| OCR Text |
...epetitive avalanche data at 100 o c n low gate charge n very high current capability n application oriented characterization n through-hol...d drain current (continuous) at t c = 25 o c 4.7 a i d drain current (continuous) at t c = 100 o... |
| Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
| File Size |
373.01K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
ST Microelectronics
|
| Part No. |
STB6NA60
|
| OCR Text |
...epetitive avalanche data at 100 o c n low intrinsic capacitances n gate charge minimized n reduced threshold voltage spread n through-hole ...d drain current (continuous) at t c = 25 o c 6.5 a i d drain current (continuous) at t c = 100 o... |
| Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
| File Size |
369.04K /
10 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|