| |
|
 |
SAMSUNG
|
| Part No. |
KM44C16000B KM44C16100B
|
| OCR Text |
.... tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCStWCS(min), the cycle is an early write cycle and the data output will remain high impedance... |
| Description |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
| File Size |
338.75K /
20 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
IBM Microeletronics
International Business Machines, Corp.
|
| Part No. |
IBM11D8325B IBM11D4325B
|
| OCR Text |
...optimized for use in byte-write non-parity appli- cations ? sn/pb tab versions only ? 16mb versions in tsop or soj packages. ? 32mb version ...cycling: t rc = t rc min) -60 680 696 ma 1, 2, 3 -70 600 616 i cc2 standby current (ttl) power... |
| Description |
8M x 32 DRAM Module(8M x 32 动态RAM模块)
4M x 32 DRAM Module(4M x 32 动态RAM模块) 4米32内存米32动态内存模块）
|
| File Size |
250.63K /
21 Page |
View
it Online |
Download Datasheet |
| |
|
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KMM5368005BSW
|
| OCR Text |
...d for v oh or v ol . t wcs is non-restrictive operating parameter. it is included in the data sheet as electrical characteristics only. if t wcs 3 t wcs (min), the cycle is an early write cycle and the data out pin will remain high impeda... |
| Description |
8M x 36 DRAM SIMM(8M x 36 动RAM模块)
|
| File Size |
393.31K /
19 Page |
View
it Online |
Download Datasheet |
| |
|
|
IBM Microeletronics
|
| Part No. |
IBM11S1325LP
|
| OCR Text |
...optimized for use in byte-write non-parity appli- cations. ? au contacts description the ibm11s2325lp is an 8mb industry standard 72-pin 4-b...cycling: t rc = t rc min) 210 210 ma 1, 2, 3 i cc2 standby current (ttl) power supply standby cu... |
| Description |
1M x 32 SO DIMM Module(Small Outline Dual In-Line Memory Module)(1M x 32小外形双列直插动态RAM模块)
|
| File Size |
231.72K /
22 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
