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GS816 8T50L 6SMB27A ZM85C150 CO6016 33880 8T50L LT343
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    VEC2603

Sanyo Semicon Device
Part No. VEC2603
OCR Text ...PD Tch Tstg PW10s, duty cycle1% mounted on a ceramic board (900mm20.8mm)1unit Conditions N-channel 30 10 0.15 0.6 0.9 150 --55 to +150 P-channel -12 8 --4 -16 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter [N-channel]...
Description N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

File Size 63.35K  /  6 Page

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    VEC2601

Sanyo Semicon Device
Part No. VEC2601
OCR Text ...PD Tch Tstg PW10s, duty cycle1% mounted on a ceramic board (900mm20.8mm)1unit Conditions N-channel 30 10 0.15 0.6 0.9 150 --55 to +150 P-channel -20 10 --3 -12 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter [N-channel...
Description N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

File Size 64.77K  /  6 Page

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    VEC2408

Sanyo Semicon Device
Part No. VEC2408
OCR Text ...PT Tch Tstg PW10s, duty cycle1% mounted on a ceramic board (900mm20.8mm)1unit mounted on a ceramic board (900mm20.8mm) Conditions Ratings 20 12 3.5 14 0.9 1.0 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Pa...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 46.78K  /  4 Page

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    VEC2402

Sanyo Semicon Device
Part No. VEC2402
OCR Text ...PT Tch Tstg PW10s, duty cycle1% mounted on a ceramic board (900mm2!0.8mm)1unit mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 30 20 4 16 0.9 1.0 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Pa...
Description Medium Output MOSFETs
N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 37.49K  /  4 Page

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    CRG0106

Toshiba Semiconductor
Part No. CRG0106
OCR Text ...IFM = 1.0 A VRRM = Rated Device mounted on a ceramic board (soldering land: 2 mm x 2 mm) Device mounted on a glass-epoxy board (soldering land: 6 mm x 6 mm) Test Condition Typ. 0.88 1.1 Max 1.1 10 65 C/W 130 A V Unit Thermal resist...
Description DIFFUSED TYPE (GENERAL PURPOSE RECTIFIER APPLICATIONS)

File Size 139.30K  /  4 Page

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    CRG03

Toshiba Corporation
Toshiba Semiconductor
Part No. CRG03
OCR Text ... V A Note: 1 Ta = 56C Device mounted on a ceramic board board size: 50 mm x 50 mm soldering land: 2 mm x 2 mm board thickness 0.64t JEDEC JEITA TOSHIBA 3-2A1A Weight: 0.013 g (typ.) Note 2: Using continuously under heavy lo...
Description Zener Diode; Application: General; Pd (mW): 400; Vz (V): 1.7 to 1.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV
General Purpose Rectifier Applications

File Size 160.04K  /  4 Page

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    CRH0106 CRH01

Toshiba Semiconductor
Part No. CRH0106 CRH01
OCR Text ...di/dt = -30 A/s IF = 1 A Device mounted on a ceramic board (soldering land: 2 mm x 2 mm) Device mounted on a glass-epoxy board (soldering land: 6 mm x 6 mm) Test Condition Min Typ. 0.71 0.86 0.90 Max 0.98 10 35 100 65 C/W 130...
Description Switching Mode Power Supply Applications

File Size 143.89K  /  4 Page

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    CRS1106 CRS11

Toshiba Semiconductor
Toshiba Corporation
Toshiba, Corp.
Part No. CRS1106 CRS11
OCR Text ...V VR = 10 V, f = 1.0 MHz Device mounted on a ceramic board (soldering land: 2 mm x 2 mm) Thermal resistance (junction to ambient) Rth (j-a) Device mounted on a glass-epoxy board (soldering land: 6 mm x 6 mm) Min Typ. 0.20 0.30 0.3...
Description Switching Mode Power Supply Applications
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.28 to 7.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.52 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: MPAK 开关电源的应用

File Size 172.13K  /  5 Page

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    CRS1206 CRS12

Toshiba Corporation
Toshiba Semiconductor
Part No. CRS1206 CRS12
OCR Text ... C C Note 1: Ta = 73C Device mounted on a ceramic board Board size: 50 mm x 50 mm Soldering size: 2 mm x 2 mm Board thickness: 0.64 t Rectangular waveform ( = 180), VR = 30 V JEDEC JEITA TOSHIBA 3-2A1A Weight: 0.013 g (typ.) N...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.76 to 8.64; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD
Switching Mode Power Supply Applications

File Size 142.98K  /  5 Page

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    CRY6206 CRY62 CRY75 CRY91 CRY68 CRY82

Toshiba Semiconductor
Part No. CRY6206 CRY62 CRY75 CRY91 CRY68 CRY82
OCR Text ...emperature Ta max (C) Device mounted on a glass-epoxy board Soldering land: 6 mm x 6 mm 500 300 PRSM 120 100 80 60 40 20 0 0 100 50 30 Recommended tW Rectangular pulse Ta = 25C 10 5 3 0.01 0.03 0.1 0.3 1 3 10 0.2 ...
Description Zener Diode Silicon Epitaxial Type

File Size 154.65K  /  5 Page

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