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For mobility Found Datasheets File :: 592 Search Time::2.953ms
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				Eudyna Devices Inc Fujitsu Media Devices Limited
Part No.	FHX06X FHX04X FHX05X
OCR Text	...HX05X, FHX06X are High Electron mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noi...
Description	KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET GaAs FET & HEMT Chips
File Size	52.84K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FHX13X FHX14X
OCR Text	... FHX14X are Super High Electron mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or...
Description	GaAs FET & HEMT Chips
File Size	59.15K / 4 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP6836P100-3 LP6836P100-2 LP6836P100 LP6836P100-1
OCR Text	...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 360 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epi...
Description	Packaged 0.25W Power PHEMT
File Size	22.31K / 2 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP6836P70
OCR Text	...aAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 m x 360 m Schottky barrier gate, defined by electron-beam photolithography. Ty...
Description	PACKAGED MEDIUM POWER PHEMT
File Size	58.53K / 3 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP6836
OCR Text	...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 360 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epit...
Description	MEDIUM POWER PHEMT
File Size	34.29K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4941AL
OCR Text	...r-low noise HEMT (High Electron mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 ...
Description	SUPER LOW NOISE InGaAs HEMT
File Size	121.24K / 6 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF4951A04 MGF4952A MGF4951A
OCR Text	...r-low noise HEMT (High Electron mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES Low noise figure @ f=12GHz MGF4951A : NFmin....
Description	SUPER LOW NOISE InGaAs HEMT
File Size	180.71K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4961B
OCR Text	...r-low noise HEMT (High Electron mobility Transistor) is designed for use in K band amplifiers. Outline Drawing 4.00.2 (1.05) 1.90.1 (1.05) (unit: mm) FEATURES Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ.) High associated gain ...
Description	SUPER LOW NOISE InGaAs HEMT
File Size	108.38K / 4 Page	View it Online	Download Datasheet

				Filtronic Compound Semicond... Filtronic Compound Semiconductors
Part No.	FP100
OCR Text	...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The FP...
Description	HIGH PERFORMANCE PHEMT IC, SMD PROGRAMMABLE TIMER
File Size	32.34K / 2 Page	View it Online	Download Datasheet

For mobility Found Datasheets File :: 592 Search Time::2.953ms
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