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mg-200 Datasheet PDF File

For mg-200 Found Datasheets File :: 4971 Search Time::0.922ms
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				Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
Part No.	BAT54-02V BAT54-02V-GS08 BAT54-02V-GS18
OCR Text	...tic Package Weight: approx. 1.6 mg Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 C/1...200 300 600 230 mA mA mA mW Document Number 85633 Rev. 1.2, 27-Apr-04 www.vishay.com 1 B...
Description	Schottky Diode in SOD-523
File Size	63.10K / 4 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 FSS130R4 FN4059
OCR Text	...- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RA...200 2.43 0.210 0.351 65 200 130 90 63 42 2.4 11 23 2.5 60 UNITS V V V V A A nA nA V ns ns ns ns nC...
Description	11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs From old datasheet system
File Size	44.41K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 FSS13A0R4 FN4487
OCR Text	...- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RA...200 2.32 0.170 0.289 20 75 45 25 61 42 8.3 22 2.2 60 UNITS V V V V A A nA nA V ns ns ns ns nC nC n...
Description	From old datasheet system 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 2A/ 100V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MBRS340T3 MBR360 MBR360T3 ON0480
OCR Text	...se: Epoxy, Molded * Weight: 217 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solder...200 100 0 0 4 8 12 16 20 24 28 32 36 40 TC, CASE TEMPERATU...
Description	From old datasheet system Surface Mount Schottky Power Rectifier
File Size	73.45K / 4 Page	View it Online	Download Datasheet

				TOKO, Inc. TDK, Corp. TDK Corporation ETC[ETC] TDK[TDK Electronics]
Part No.	MLF2012 MLF2012A1R0XT MLF2012A1R2XT MLF2012A1R5XT MLF2012A1R8XT MLF2012A2R2XT MLF2012A2R7XT MLF2012A3R3XT MLF2012A3R9XT MLF2012A4R7XT MLF2012C101XT MLF2012C150XT MLF2012C180XT MLF2012C220XT MLF2012C270XT MLF2012C330XT MLF2012C680XT MLF2012C820XT MLF2012D47N MLF2012D68NXT MLF2012D82NXT MLF2012DR10XT MLF2012DR12XT MLF2012DR15XT MLF2012DR18XT MLF2012DR22XT MLF2012DR27XT MLF2012DR33XT MLF2012DR39XT MLF2012DR47XT MLF2012DR56XT MLF2012DR68XT MLF2012DR82XT MLF2012E100XT MLF2012E120XT MLF2012E5R6XT MLF2012E6R8XT MLF2012E8R2XT MLF2012K390XT MLF2012K470XT MLF2012K560XT
OCR Text	...50.3 T T 0.850.2 1.250.2 Weight(mg) 10 14 Dimensions in mm 1 ELECTRICAL CHARACTERISTICS Inductance (H) 0.047 0.068 0.082 0.1 0.12 0.15 0...200 250 185 230 170 220 150 200 145 180 135 170 125 160 115 150 105 135 100 125 75 105 65 95 60 85 5...
Description	SMD 贴片
File Size	25.85K / 3 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	STK4050V
OCR Text	...ified Transformer Power Supply (MG-250 Equivalent) Equivalent Circuit Application Circuit: 200W min Single Channel AF Power Amplifier No. 4592-2/3 STK4050V s No products described or contained herein are intended for use in s...
Description	AF Power Amplifier (Split Power Supply) (200 W min / THD = 0.08%) AF Power Amplifier (Split Power Supply) (200 W min, THD = 0.08%)
File Size	50.47K / 3 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	STK4050 STK4050II
OCR Text	... Specified Transformer Supply (MG-250 or Equivalent) Equivalent Circuit No. 4807--2/3 STK4050II Sample Application Circuit (200W min AF Power Amplifier) s No products described or contained herein are intended for use in ...
Description	AF Power Amplifier (Split Power Supply) (200W min / THD = 0.4%) AF Power Amplifier (Split Power Supply) (200W min, THD = 0.4%) AF Power Amplifier (Split Power Supply) (200W min THD = 0.4%)
File Size	63.57K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRH8250 IRH7250
OCR Text	...fects Ion Cu LET (Si) (MeV/mg/cm2) 28 Fluence (ions/cm2) 3x 105 Range (m) 43 VDSBias (V) 180 VGS Bias (V) -5 www.irf.com 3 IRH7250, IRH8250 Devices Post-Irradiation Fig 1. Typical Response of Gate Thresh...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
File Size	313.63K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8250 IRHM7250 JANSR2N7269 IRHM3250 IRHM4250 JANSF2N7269 JANSG2N7269
OCR Text	...rating Area Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 Range VDS(V) (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 190 180 170 125 -- 39 100 100 100 50 -- 200 150 100 50 0 0 -5 -10 VGS -15 -20 Cu Br VDS Fig a. Si...
Description	200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
File Size	266.93K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM9230
OCR Text	... V Ion Ni LET (Si) (MeV/mg/cm2) 28 Fluence (ions/cm2) 1 x 105 Range (m) ~41 VDS Bias (V) -200 VGS Bias (V) 5 To Order Previous Datasheet IRHM9230 Device Repetitive Rating; Pulse width limited by maximum ju...
Description	TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
File Size	145.28K / 4 Page	View it Online	Download Datasheet

For mg-200 Found Datasheets File :: 4971 Search Time::0.922ms
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