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| Part No. |
HYB18T512160BF-3.7 HYB18T512800BF-3.7 HYB18T512400BF-3.7
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| OCR Text |
...o sdram 1.2 description the 512-mb ddr2 dram is a high-speed double- data-rate-two cmos dram device containing 536,870,912 bits and internal...12:0, address signal 10/autoprecharge h3 a1 i sstl h7 a2 i sstl j2 a3 i sstl j8 a4 i sstl j3 a5 i ss... |
| Description |
512-Mbit Double-Data-Rate-Two SDRAM
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| File Size |
1,205.68K /
57 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
BUK954R2-55B NXPSEMICONDUCTORS-BUK954R2-55B127
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| OCR Text |
...v i d drain current v gs =5v; t mb =25c; see figure 1 ; see figure 3 [1] --75a p tot total power dissipation t mb = 25 c; see figure 2 -...12 -3.54.2m ? v gs =10v; i d =25a; t j =25c -3.13.7m ?
buk954r2-55b all information provided in t... |
| Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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| File Size |
175.40K /
14 Page |
View
it Online |
Download Datasheet
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Price and Availability
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