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Kersemi Electronic Co.,...
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| Part No. |
IRF9540NL
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| OCR Text |
...17 w i d = -23a parameter typ. max. units r q jc junction-to-case CCC 1.1 r q ja junction-to-ambient ( pcb mounted,steady-state)** CCC 40 t...80v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source ... |
| Description |
Advanced Process Technology
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| File Size |
1,067.99K /
10 Page |
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Alpha & Omega Semicondu...
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| Part No. |
AON6276
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| OCR Text |
...ermal characteristics parameter max t a =70c 4.7 c units junction and storage temperature range -55 to 150 typ p dsm w t a =25c t a =25c t a...80v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.1 2.6 3.2 v 2.2 2.6 t j =1... |
| Description |
80V N-Channel AlphaSGT
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| File Size |
302.98K /
6 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
AUIRF540Z AUIRF540ZSTRL
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| OCR Text |
max. 26.5m ?? i d 36a description specifically designed for au tomotive applications, this hexfet? power mosfet utilizes the latest pr...80v q gd gate-to-drain charge ??? 15 ??? v gs = 10v ? t d(on) turn-on delay time ??? 15 ... |
| Description |
AUTOMOTIVE GRADE
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| File Size |
690.91K /
12 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
AUIRF5210STRL
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| OCR Text |
max. 60m ?? i d -38a description specifically designed for automoti ve applications, this cellular design of hexfet? power mosfets uti...80v,v gs = 0v,t j =125c i gss gate-to-source forwar d leakage ??? ??? -100 na v gs = -2... |
| Description |
AUTOMOTIVE GRADE
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| File Size |
292.20K /
10 Page |
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it Online |
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Price and Availability
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