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  id-6.4a Datasheet PDF File

For id-6.4a Found Datasheets File :: 4105    Search Time::2.39ms    
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    HITACHI[Hitachi Semiconductor]
Part No. 2SK2726
OCR Text ... = 25C, Rg 50 Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 30 7 28 7 7 2.7 30 150 -55 to +150 Unit V V A A A A mJ...6.0 1100 330 65 21 5 8 20 65 60 40 0.95 260 Max -- -- 10 10 3.5 0.95 -- -- -- -- -- -- -- -- -- -- -...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 48.45K  /  10 Page

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    ELM13415CA-S

ELM Technology Corporation
Part No. ELM13415CA-S
OCR Text Id (A) -Id (A) 15 -2.5V 6 10 Vgs=-1.5V 5 4 125C 2 25C 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 80 Vgs=-1.8V 0 0 0.5 1 1.5 2 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalize...
Description Single MOSFET

File Size 112.86K  /  4 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3044
OCR Text ...rrent DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 30 7 14 100 40 2 150 -55 to +150 Unit V V A A mJ W C C 1 2 2.540.3 3...6 4 2 0 0 10 20 30 40 50 60 5.5V VGS=15V 10V 8 TC=25C 10 ID VGS 6 VDS=25V 25C 100C Vth TC ...
Description Silicon N-Channel Power F-MOS FET

File Size 43.95K  /  3 Page

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    ST3402S23RG

Stanson Technology
Part No. ST3402S23RG
OCR Text ...TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical 30 12 4.0 2.8 10 1.25 1.25 0.8 150 -55/150 100 Unit V V A A A W /W ...6 100 1 10 4 48 53 80 65 105 V V nA uA A 58 m S 12 0.8 1.2 V Qg Qgs Qgd Ciss C...
Description N Channel Enhancement Mode MOSFET
   N Channel Enhancement Mode MOSFET

File Size 378.49K  /  6 Page

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    AO8801 AO8801L

Alpha & Omega Semicondu...
Alpha & Omega Semiconductors
Part No. AO8801 AO8801L
OCR Text ...al. Features VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42m (VGS = -4.5V) RDS(ON) < 53m (VGS = -2.5V) RDS(ON) < 70m (VGS = -1.8...6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25C unless otherwise noted ...
Description Dual P-Channel Enhancement Mode Field Effect Transistor

File Size 102.29K  /  4 Page

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    GL3055

GTM CORPORATION
Part No. GL3055
OCR Text ...E POWER MOSFET BVDSS RDS(ON) ID 30V 26m 4A The GL3055 provide the designer with the best combination of fast switching, ruggedized ...6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max....
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 355.05K  /  4 Page

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    MCH3408

Sanyo Semicon Device
Part No. MCH3408
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.85 1 : G...6 0.8 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Drai...
Description N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications

File Size 27.11K  /  4 Page

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    AO8800

Alpha Industries Inc
Part No. AO8800
OCR Text ...ion. Features VDS (V) = 30V ID = 6.4A RDS(ON) < 24m (VGS = 10V) RDS(ON) < 30m (VGS = 4.5V) RDS(ON) < 40m (VGS = 2.5V) RDS(ON) < 70m (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 223.29K  /  6 Page

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    CET
Part No. CEB04N7 CEF04N7 CEP04N7
OCR Text ...0V 700V RDS(ON) 3.5 3.5 3.5 3.5 ID 4A 4A 4A 4A d @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High powe...6 65 Units C/W C/W 2005.April 4 - 18 http://www.cetsemi.com CEP04N7/CEB04N7 CEI04N7/CEF04N...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 126.91K  /  4 Page

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