g1db pdf Datasheet P9 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : BAS716 IRF3711S KIA7908 717MTV EPS13 PR1DDS 083PI 71308
	Product Description
	Full Text Search

g1db Datasheet PDF File

For g1db Found Datasheets File :: 740 Search Time::1.484ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				Toshiba Semiconductor
Part No.	TIM1414-4LA
OCR Text	... 14.0GHz to 14.5GHz n HIGH GAIN g1db=6.5dB at 14.0GHz to 14.5GHz TIM1414-4LA PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C ) CHARACTERISTICS SYMBOL CONDITION Out...
Description	MICROWAVE POWER GaAs FET
File Size	244.98K / 2 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM7179-6UL
OCR Text	...m at 7.1GHz to 7.9GHz HIGH GAIN g1db=9.0dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain...
Description	HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz
File Size	116.72K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM7179-60SL
OCR Text	...m at 7.1GHz to 7.9GHz HIGH GAIN g1db=6.5dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain...
Description	IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
File Size	106.10K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Electronic Theatre Controls, Inc.
Part No.	FLM8596-4F
OCR Text	g1db = 7.5dB (Typ.) High PAE: add = 29% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM8596-4F is a power GaAs FET that is internally matched for stan...
Description	X, Ku-Band Internally Matched FET
File Size	300.48K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM1414-18L-252
OCR Text	...N T HERMETICALLY SEALED PACKAGE g1db=6.0dB at 13.75GHz to 14.5GHz T LOW INTERMODULATION DISTORTION IM3(Min.)=-25dBc at Po=36dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Poin...
Description	MICROWAVE POWER GaAs FET
File Size	39.47K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM1414-4LA
OCR Text	... 14.0GHz to 14.5GHz n HIGH GAIN g1db=6.5dB at 14.0GHz to 14.5GHz TIM1414-4LA PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C ) CHARACTERISTICS SYMBOL CONDITION Out...
Description
File Size	84.72K / 2 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL57MK
OCR Text	g1db = 11.5dB (Typ.) High PAE: add = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity an...
Description	L-Band Medium & High Power GaAs FET
File Size	96.06K / 4 Page	View it Online	Download Datasheet

				SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Part No.	FLM7785-4F
OCR Text	g1db = 8.5dB (Typ.) High PAE: add = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM7785-4F is a power GaAs FET that is internally matched for stan...
Description	C-Band Internally Matched FET
File Size	226.83K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM7179-4UL
OCR Text	...m at 7.1GHz to 7.9GHz HIGH GAIN g1db= 9.0dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gai...
Description	HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz
File Size	116.88K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC087XP
OCR Text	g1db = 7.0dB(Typ.) High PAE: add = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, ...
Description	GaAs FET & HEMT Chips
File Size	53.73K / 4 Page	View it Online	Download Datasheet

For g1db Found Datasheets File :: 740 Search Time::1.484ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |