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SPT9713 C9405CA MBU60 ON0591 K2000Y CPH3105 FEPF16FT FRITS
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  dur Datasheet PDF File

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    SILICON STORAGE TECHNOLOGY INC
Part No. SST32HF202-90-4C-L3K SST32HF402-90-4C-L3KE SST32HF202-90-4E-L3KE
OCR Text ... tasks. any sdp commands loaded dur- ing the internal program operation will be ignored. flash sector/block-erase operation the flash sector/block-erase operation allows the system to erase the device on a sector-by-sector (or block-by- blo...
Description SPECIALTY MEMORY CIRCUIT, PBGA48

File Size 356.53K  /  30 Page

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    SST39SF512-90-4C-PH SST39SF512-70-4C-WH SST39SF512-70-4I-WH SST39SF512-70-4I-WHE SST39SF512-70-4C-WHE SST39SF512-70-4I-N

Silicon Storage Technol...
Microchip Technology Inc.
http://
Silicon Storage Technology, Inc
Part No. SST39SF512-90-4C-PH SST39SF512-70-4C-WH SST39SF512-70-4I-WH SST39SF512-70-4I-WHE SST39SF512-70-4C-WHE SST39SF512-70-4I-NH SST39SF512-70-4I-NHE SST39SF512-90-4C-WH SST39SF512-70-4C-NHE SST39SF512-90-4C-NH SST39SF512-70-4C-PH SST39SF51203 SST39SF512-70-4C-NH
OCR Text ...or ce#, whichever occurs first. dur- ing the erase operation, the only valid read is toggle bit or data# polling. see table 4 for the command sequence, figure 10 for timing diagram, and figure 18 for the flow- chart. any commands written du...
Description    512 Kbit / 1 Mbit (x8) Multi-Purpose Flash

File Size 272.71K  /  22 Page

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    M28W160B150N1T

STMICROELECTRONICS
Part No. M28W160B150N1T
OCR Text ...um. 12v may be applied to v pp dur- ing program and erase for 1000 cycles on the main blocks and 2500 cycles on the parameter blocks. stressing the device beyond these limits could damage the device. v pp may be tied to 5v during read or ...
Description 1M X 16 FLASH 12V PROM, 150 ns, PDSO48

File Size 290.66K  /  40 Page

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    MC33989 MC33989D

Motorola, Inc
Part No. MC33989 MC33989D
OCR Text ...n Tsd-Tpw Rst-th1 Rst-th2 reset-dur Vddr td LR1 LR2 LD ThermS 20 4.3 3.6 1 1 5 5 10 20 5 20 25 25 50 4.5 V 3.8 Typ Max 40 4.7 4 2 ms V s mV mV mV mV 9V<Vsup<18, Idd=10mA 5.5V<Vsup<27V, Idd=10mA 1mA<IIdd<200mA Vsup=13.5V, I=100mA C Selectabl...
Description System Basis Chip With High Speed CAN Transceiver

File Size 268.15K  /  23 Page

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    TE Connectivity, Ltd.
Part No. MT45W1MV16PAFA-85WT MT45W1ML16PAFA-85WT MT45W2MV16PAFA-85WT MT45W2ML16PAFA-85WT
OCR Text ...w for byte-wide data transfers. dur- ing read operations, enabled bytes are driven onto the dqs. the dqs associated with a disabled byte are put into a high-z state during a read operation. dur- ing write operations, any disabled bytes will...
Description 1M X 16 PSEUDO STATIC RAM, 85 ns, PBGA48 FBGA-48
2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA48 FBGA-48

File Size 311.03K  /  27 Page

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    Nanya Technology, Corp.
Part No. N2DS25616CS-5T N2DS25616CS-75B N2DS25616CS-6K N2DS25616CT-5T N2DS25616CT-6K N2DS25616CT-75B N2DS25640CS-6K N2DS25640CT-6K N2DS25680CS-5T N2DS25680CT-6K N2DS25640CS-5T N2DS25640CT-5T N2DS25640CS-75B N2DS25680CT-5T N2DS25680CS-6K N2DS25680CT-75B
OCR Text ...coincident with that input data dur ing a write access. dm is sampled on both edges of dqs. although dm pins are input only, t he dm loading matches the dq and dqs loading. dur- ing a read, dm can be driven high, low, or floated. ba0, ba1...
Description 16M X 16 DDR DRAM, 0.65 ns, PDSO66 0.400 INCH, GREEN, PLASTIC, TSOP2-66
16M X 16 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, GREEN, PLASTIC, TSOP2-66
16M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, GREEN, PLASTIC, TSOP2-66
16M X 16 DDR DRAM, 0.65 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
16M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
16M X 16 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
64M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, GREEN, PLASTIC, TSOP2-66
64M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
32M X 8 DDR DRAM, 0.65 ns, PDSO66 0.400 INCH, GREEN, PLASTIC, TSOP2-66
32M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
64M X 4 DDR DRAM, 0.65 ns, PDSO66 0.400 INCH, GREEN, PLASTIC, TSOP2-66
64M X 4 DDR DRAM, 0.65 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, GREEN, PLASTIC, TSOP2-66
32M X 8 DDR DRAM, 0.65 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
32M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, GREEN, PLASTIC, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66

File Size 2,359.01K  /  76 Page

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    K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/LAA K4H561638F-UC/LAA K4H560838F-UC/LB0 K4H561638F-UC/LB0 K4H560838F-U

Samsung Semiconductor Co., Ltd.
Part No. K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/LAA K4H561638F-UC/LAA K4H560838F-UC/LB0 K4H561638F-UC/LB0 K4H560838F-UC/LB3 K4H561638F-UC/LB3
OCR Text ...ng ck, ck and cke are disabled dur- ing power-down and self refresh modes, providing low standby power. cke will recognize an lvcmos low level prior to vref being stable on power-up. cs input chip select : cs enables(registered low) and...
Description 256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格

File Size 208.14K  /  23 Page

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    ASMT-JB11-NMP01

AVAGO TECHNOLOGIES LIMITED
Part No. ASMT-JB11-NMP01
OCR Text ...precautions need to be observed dur - ing assembly using silicone encapsulated led products. failure to comply might lead to damage and premature failure of the led. 1. do not poke sharp objects into the silicone encap - sulant....
Description Silicone Encapsulation for LED Advantages and Handling Precautions

File Size 37.63K  /  2 Page

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