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  ds-117 Datasheet PDF File

For ds-117 Found Datasheets File :: 2206    Search Time::2.703ms    
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    RD16HHF1 RD16HHF111

Mitsubishi Electric Semiconductor
Part No. RD16HHF1 RD16HHF111
OCR Text ...ro gate voltage drain current v ds =17v, v gs =0v - - 10 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate thres...117.1 0.025 34.3 0.588 -92.6 50 0.676 -121.9 22.018 101.3 0.027 24.3 0.540 -116.9 100 0.650 -145.8 1...
Description RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W

File Size 580.24K  /  9 Page

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    TC1301

Transcom, Inc.
Part No. TC1301
OCR Text ...ax unit nf noise figure at v ds = 4 v, i ds = 50 ma, f = 12ghz 0.8 1.0 db g a associated gain at v ds = 4 v, i ds = 50 ma, ...117.84 7 0.6961 -147.93 3.9201 85.60 0.0785 27.63 0.3159 -122.98 8 0.6897 -153.62 3.4764 80...
Description Low Noise and Medium Power GaAs FETs

File Size 247.47K  /  6 Page

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    IRFP9140N

International Rectifier
Part No. IRFP9140N
OCR Text ...mounting hole. v dss = -100v r ds(on) = 0.117 w i d = -23a l advanced process technology l dynamic dv/dt rating l 175c operating temperature l p-channel l fast switching l fully avalanche rated description to-247ac parameter max. units i...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package

File Size 147.24K  /  8 Page

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    NTD4804N-35G

ON Semiconductor
Part No. NTD4804N-35G
OCR Text ...nel, dpak/ipak features ? low r ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to...117 a i d max v (br)dss 5.5 m @ 4.5 v www. onsemi.com see detailed ordering and shipping informa...
Description    Power MOSFET

File Size 89.41K  /  8 Page

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    TC1201

Transcom, Inc.
Part No. TC1201
OCR Text ...ax unit nf noise figure at v ds = 4 v, i ds = 25 ma , f = 12ghz 0.5 0.7 db g a associated gain at v ds = 4 v, i ds = 25 m...117.84 3.8241 92.37 0.0909 26.70 0.3983 -73.94 10 0.7294 -123.59 3.5208 87.18 0.0930 ...
Description Low Noise and Medium Power GaAs FETs

File Size 247.30K  /  6 Page

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    IXFN27N80 IXFK25N80

IXYS Corporation
Part No. IXFN27N80 IXFK25N80
OCR Text ...inium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) ra...117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfk 25n80 ixf...
Description (IXFx2xN80) HiPerFETTM Power MOSFETs

File Size 293.71K  /  4 Page

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    IXFN20N120

IXYS Corporation
Part No. IXFN20N120
OCR Text ...inium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) ra...117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 563.57K  /  4 Page

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    NTMFS4933NT1G

ON Semiconductor
Part No. NTMFS4933NT1G
OCR Text ...nel, so ? 8 fl features ? low r ds(on) to improve conduction and overall efficiency ? these devices are pb ? free, halogen free/bfr free an...117.5 junction ? to ? ambient ? (t 10 s) (note 3) r ja 17.13 3. surface ? mounted on fr4 board ...
Description    Single N?Channel Power MOSFET

File Size 113.68K  /  7 Page

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For ds-117 Found Datasheets File :: 2206    Search Time::2.703ms    
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