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IRF[International Rectifier]
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| Part No. |
IRHNA8160 IRHNA7160
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| OCR Text |
..., VGS = 0V Tj = 25C, IF = 51A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L...750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per n... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
128.72K /
4 Page |
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NEC[NEC] NEC Corp. NEC, Corp.
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| Part No. |
2SK3322 2SK3322-ZK 2SK3322-S 2SK3322-ZJ 2SK3322-ZK-AZ K3322-ZK
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| OCR Text |
...GS = 0 V IF = 5.5 A, VGS = 0 V, di/dt = 50 A/s
15 4 4.4 1.0 1.6 5.3
VF(S-D) trr Qrr
s C
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CA...750.1 2.54 TYP.
0.50.2 2.54 TYP.
1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.3 2.54... |
| Description |
5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB MP-25ZK, 3 PIN SWITCHING N-CHANNEL POWER MOSFET 开关N沟道功率MOSFET
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| File Size |
87.49K /
8 Page |
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NXP Semiconductors N.V.
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| Part No. |
BT149D126
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| OCR Text |
...r fusing t = 10 ms - 0.32 a 2 s di t /dt repetitive rate of rise of on-state current after triggering i tm = 2 a; i g = 10 ma; di g /dt = ...750 13508 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. ... |
| Description |
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 400 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped 0.8 A, 400 V, SCR
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| File Size |
58.67K /
12 Page |
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it Online |
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