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  di-500 Datasheet PDF File

For di-500 Found Datasheets File :: 31569    Search Time::1.578ms    
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    2SJ244

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SJ244
OCR Text ...y Cycle = 1 % t rr ( ns ) di/dt = 10 A/s PW = 10 s 1000 1000 td(off) tf tr Reverse Recovery Time t ( ns ) Switching Time 500 500 200 200 100 100 td(on) 50 50 20 -0.1 -0.2 -0.5 -1.0 -2 -5 2...
Description Silicon P-Channel MOS FET

File Size 44.24K  /  8 Page

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    2SJ247

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ247
OCR Text ...00 C (pF) 100 50 20 10 0.5 -0.2 di/dt = 50 A/ s VGS = 0 10000 3000 1000 300 100 Crss 30 10 0 -10 -20 -30 Drain to Source Voltage -40 -50 VD...500 200 100 50 20 10 5 -0.1 -0.2 t d (off) VGS = -10 V, VDD = -30 V :. Pw = 2 s, duty 1% VDS ...
Description Silicon P-Channel MOS FET

File Size 46.46K  /  8 Page

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    2SJ278

Sanyo Semicon Device
Hitachi Semiconductor
Part No. 2SJ278
OCR Text ...ime trr (ns) Capacitance C (pF) di/dt = 50 A/s VGS = 0, duty < 1 % Typical Capacitance vs. Drain to Source Voltage 1000 200 100 50 Cis...500 V GS = -10 V, V DD = -30 V PW = 2 s, duty < 1 % Switching Time t (ns) 200 100 50 20 10 5 -0.01 ...
Description Silicon P-Channel MOS FET

File Size 41.20K  /  8 Page

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    2SJ317

HITACHI[Hitachi Semiconductor]
Part No. 2SJ317
OCR Text ... Switching Time 200 100 50 di/dt = 10 A/s V GS = 0 VGS = -4 V . . 200 V DD = -10 V PW = 5 s Duty cycle < 1 % = 100 td(on) 20 -...500 200 100 50 Ciss Crss Coss VGS = 0 f = 1 MHz -8 -10 -4 -5 VDS 0 2 4 Gate Charge 6 8 Q...
Description Silicon P-Channel MOS FET

File Size 37.77K  /  8 Page

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    2SJ319 2SJ319L 2SJ319S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ319 2SJ319L 2SJ319S
OCR Text ....2 VGS = 0 f = 1 MHz Crss di/dt = 50 A/s, VGS = 0 duty < 1 %, Ta = 25 C 0 -10 -20 -30 -40 -50 Reverse Drain Curre...500 200 100 50 20 10 5 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -100 -4 Drain to Source Voltage ...
Description Power switching MOSFET
Silicon P-Channel MOS FET

File Size 44.83K  /  9 Page

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    2SJ350

HITACHI[Hitachi Semiconductor]
Part No. 2SJ350
OCR Text ...Crss Coss Ciss 200 100 50 20 di / dt = 50 A / s, V GS = 0 Ta = 25 C, Pulse Test 10 -5 -10 -0.1 -0.2 -0.5 -1 -2 Reverse Drain Current I...500 200 100 50 20 10 5 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 V GS = -10 V, V DD = -30 V PW = 2 s, du...
Description Silicon P-Channel MOS FET

File Size 46.11K  /  9 Page

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    2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2

NEC[NEC]
Part No. 2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2
OCR Text ...= -3.1 A, IG = -2 mA IF = 3.0 A di/dt = 50 A/s VDD = -25 V, ID = -1.5 A VGS(on) = -10 V RG = 10 , RL = 17 Conditions VDS = -30 V, VGS = 0 V...500 275 8 42 145 170 25.1 2.0 9.8 112 0.35 0.20 -1.5 MIN. TYP. MAX. -10 -/+10 -2.0 Unit A A V S ...
Description P-channel MOS FET(-30V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
From old datasheet system

File Size 63.14K  /  8 Page

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    2SJ361

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ361
OCR Text ...= 1 MHz 500 300 100 30 10 di/dt = 20 A/s VGS = 0, Ta = 25 C 1000 Ciss 3 1 0.3 Crss 300 100 -0.1 0.1 -0.3 -1 Reverse Drain Current -3 -10 I DR (A) 0 -4 -8 -12 -16 -20 Drain to Source Voltage V DS (V) Dynamic Input Charac...
Description Silicon P-Channel MOS FET

File Size 42.04K  /  9 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text ...verse Drain Current I DR (A) di / dt = 20 A / s VGS = 0, Ta = 25 C Crss VGS = 0 f = 1 MHz -40 -50 Drain to Source Voltage V DS (...500 Switching Time t (ns) tf 200 tr 100 50 V GS = -4 V, V DD = -10 V PW = 5 s, duty < 1 % 20 10 -0.1...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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    2SJ450

HITACHI[Hitachi Semiconductor]
Part No. 2SJ450
OCR Text ...00 100 50 Ciss 200 100 50 di / dt = 50 A / s V GS = 0, Ta = 25 C Coss 20 10 5 0 VGS = 0 f = 1 MHz -10 -20 Crss 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) -30 -40 -50 Drain to Source Vol...
Description    Silicon P-Channel MOS FET

File Size 43.82K  /  9 Page

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For di-500 Found Datasheets File :: 31569    Search Time::1.578ms    
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