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For comparative Found Datasheets File :: 1011    Search Time::1.797ms    
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    ILD31 ILD55 ILQ55 ILD30 ILQ30 ILQ31 IL30 IL55 IL31

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. ILD31 ILD55 ILQ55 ILD30 ILQ30 ILQ31 IL30 IL55 IL31
OCR Text .........................7 mm min. comparative Tracking Index............................. 175 Storage Temperature ................... -55C to +125C Operating Temperature................ -55C to +100C Lead Soldering Time at 260C .................
Description    PHOTODARLINGTON OPTOCOUPLER
From old datasheet system
PHOTODARLINGTON OPTOCOUPLER 4 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER

File Size 63.85K  /  3 Page

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    MTP10N60E7 ON2541 MTP10N60E7-D

ON Semiconductor
Part No. MTP10N60E7 ON2541 MTP10N60E7-D
OCR Text ...ery abruptness and thus gives a comparative estimate of probable noise generated. A ratio of 1 is considered ideal and values less than 0.5 are considered snappy. Compared to ON Semiconductor standard cell density low voltage MOSFETs, high ...
Description TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS

File Size 178.14K  /  8 Page

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    MTP75N06HD MTP75N06HD_D ON2646

ON Semiconductor
Motorola, Inc
Part No. MTP75N06HD MTP75N06HD_D ON2646
OCR Text ...ery abruptness and thus gives a comparative estimate of probable noise generated. A ratio of 1 is considered ideal and values less than 0.5 are considered snappy. Compared to Motorola standard cell density low voltage MOSFETs, high cell den...
Description From old datasheet system
TMOS POWER FET 75 AMPERES 50 VOLTS
TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS

File Size 275.55K  /  8 Page

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    TCET1202G1 TCET1204G1 TCET1203G1 TCET1201G1 TCET1200G1 TCET1201 TCET2200 TCET1200 TCET1202 TCET1203 TCET1204

VISAY[Vishay Siliconix]
Part No. TCET1202G1 TCET1204G1 TCET1203G1 TCET1201G1 TCET1200G1 TCET1201 TCET2200 TCET1200 TCET1202 TCET1203 TCET1204
OCR Text ... according to VDE 0303/IEC 112 comparative Tracking Index: CTI 175 D Thickness through insulation 0.75 mm D Internal creepage distance > 4 mm General features: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certific...
Description Optocoupler with Phototransistor Output

File Size 231.72K  /  13 Page

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    CNY64 CNY65 CNY64_66

Vishay Telefunken
Part No. CNY64 CNY65 CNY64_66
OCR Text ...e according to VDE 0303/IEC 112 comparative Tracking Index: CTI = 200 D Thickness through insulation > 3 mm D Coupling Systems: CNY64 Coupling System H, CNY65 Coupling System J, CNY66 Coupling System K, D Underwriters Laboratory (UL) 157...
Description Optocoupler with Phototransistor Output
From old datasheet system

File Size 128.64K  /  9 Page

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    HCPL0738 HCPL-0738

HP[Agilent(Hewlett-Packard)]
Part No. HCPL0738 HCPL-0738
OCR Text ...Clearance) Tracking Resistance (comparative Tracking Index) Isolation Group Symbol L(I01) L(I02) Value 4.9 4.8 0.08 CTI 175 IIIa Units mm mm mm Volts Conditions Measured from input terminals to output terminals, shortest distance through a...
Description High Speed CMOS Optocoupler

File Size 203.64K  /  8 Page

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    HSSR8060 HSSR-8060 HSSR-8400

Fujitsu, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. HSSR8060 HSSR-8060 HSSR-8400
OCR Text ...able 1) Tracking Resistance (comparative Tracking Index) Isolation Group CTI 200 IIIa V Option 300 - surface mount classification is Class A in accordance with CECC 00802. Absolute Maximum Ratings Storage Temperature .......
Description 400 V/10 Ohm/ General Purpose/ 1 Form A/ Solid State Relay
60 V/0.7 Ohm, General Purpose, 1 Form A, Solid State Relay 60 V/0.7欧姆,通用 A型,固态继电器
60 V/0.7 Ohm/ General Purpose/ 1 Form A/ Solid State Relay

File Size 246.13K  /  12 Page

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    IL4208

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. IL4208
OCR Text ............................. 7 mm comparative Tracking Index per DIN IEC 112/VDE 0303 part 1, Group IIIa per DIN VDE 6110..................................................... 175 Isolation Resistance VIO=500 V, TA=25C ...........................
Description From old datasheet system
800 V TRIAC DRIVER OPTOCOUPLER

File Size 27.42K  /  2 Page

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    M54676 M54676P M54676E

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M54676 M54676P M54676E
OCR Text ...et within the IC. * Vref input (comparative voltage) Chopper current (motor current) is controlled by changing Vref input voltage. By inputting SIN wave to VrefA and COS wave to VrefB, A-phase coil current and B-phase coil current change co...
Description From old datasheet system
2-PHASE STEPPER MOTOR DRIVER

File Size 111.66K  /  5 Page

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    MMDF3N03HDR2 MMDF3N03HD MMDF3N03HD-D

ONSEMI[ON Semiconductor]
Part No. MMDF3N03HDR2 MMDF3N03HD MMDF3N03HD-D
OCR Text ...ery abruptness and thus gives a comparative estimate of probable noise generated. A ratio of 1 is considered ideal and values less than 0.5 are considered snappy. Compared to ON Semiconductor standard cell density low voltage MOSFETs, high ...
Description Power MOSFET 3 Amps, 30 Volts 4.1 A, 30 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 3 Amps, 30 Volts N-Channel SO-8, Dual

File Size 118.94K  /  12 Page

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For comparative Found Datasheets File :: 1011    Search Time::1.797ms    
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