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				Unisem Group UNISEM[UNISEM]
Part No.	US1175 US1175CM US1175CP US1175CS
OCR Text	...y Bipolar process that achieves comparable equivalent on resistance to that of discrete MOSFETs. This product is specifically designed to provide well regulated supply for applications requiring very low dropout such as 2.8V from 3.3V ATX p...
Description	7.5A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR
File Size	34.76K / 5 Page	View it Online	Download Datasheet

				Unisem Group UNISEM[UNISEM]
Part No.	US1176 US1176CM US1176CP
OCR Text	...y Bipolar process that achieves comparable equivalent on resistance to that of discrete MOSFETs. The US1176 also provides a convenient Shutdown pin that allows the regulator to be shutdown and reduce the input current consumption. Unlike th...
Description	7.5A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR WITH SHUTDOWN INPUT
File Size	34.89K / 5 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semiconductor Motorola, Inc
Part No.	BU208A ON0232
OCR Text	...but practical tests have showed comparable efficiency for Motorola devices even at the higher level of IB1. An LB of 10 H to 12 H should give satisfactory operation of BU208A with ICM of 4 to 4.5 A and IB1 between 1.2 and 2 A. ^ [ ...
Description	5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-204AA From old datasheet system
File Size	201.86K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPU165MF
OCR Text	...modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art mater...
Description	IGBT SIP MODULE Fast IGBT
File Size	398.34K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPU165MK
OCR Text	...modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art mater...
Description	IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
File Size	76.58K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPU165MM
OCR Text	...modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art mater...
Description	IGBT SIP MODULE Short Circuit Rated Fast IGBT
File Size	78.17K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPU165MU
OCR Text	...modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art mater...
Description	IGBT SIP MODULE Ultra-Fast IGBT
File Size	398.85K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP10N10EL ON2537
OCR Text	...ce-to-Drain Diode Recovery Time comparable to a Discrete Fast Recovery Diode * Diode is Characterized for Use in Bridge Circuits * IDSS and VDS(on) Specified at Elevated Temperature MTP10N10EL Motorola Preferred Device TMOS POWER FET...
Description	From old datasheet system TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS
File Size	221.09K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP10N10E ON2538
OCR Text	...ce-to-Drain Diode Recovery Time comparable to a Discrete Fast Recovery Diode * Diode is Characterized for Use in Bridge Circuits MTP10N10E TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM N-Channel Enhancement-Mode Silicon Gat...
Description	From old datasheet system TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
File Size	237.69K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP10N40 MTP10N40E ON2540 MTP10N40E-D
OCR Text	...ce-to-Drain Diode Recovery Time comparable to Discrete Fast Recovery Diode D MTP10N40E TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS (R) G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwis...
Description	TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
File Size	249.12K / 8 Page	View it Online	Download Datasheet

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