| |
|
 |
Bourns Electronic Solut...
|
| Part No. |
PTF01-152A-102B1
|
| OCR Text |
...r pom 1.450 additive 1 0.01 3.1 carbon 7440-44-0 0.04 0.001 manganese 7439-96-5 0.21 0.005 phosphorus 7803-51-2 0.011 0.0002 sulfur 7704-34-9 0.013 0.0003 silicon 14464-46-1 0.01 0.0002 aluminum 7429-90-5 0.045 0.001 steel iron 1345-25-1 98... |
| Description |
Panel Control
|
| File Size |
186.67K /
3 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
CREE POWER
|
| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
|
| OCR Text |
... face of the wafer. marking the carbon face of each individual wafer is laser marked with ocr compatible font (similar to defini- tions and characteristics in semi m12). xxxxxxx-xx
page 8 ? effective december 1998 ? revised march 2003 sub... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
| File Size |
273.34K /
17 Page |
View
it Online |
Download Datasheet |
| |
|
|
Micross Components
|
| Part No. |
M20-089114-45
|
| OCR Text |
...lip material polypropylene with carbon powder and glass bead 10 - 10 <0.01 70?c polypropylene with carbon powder and glass bead polypropylene with carbon powder 1 5
|
| Description |
Tight Dimensional Pocket Tolerance
|
| File Size |
492.16K /
1 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
