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For backside Found Datasheets File :: 6511    Search Time::0.781ms    
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    HMC986

Hittite Microwave Corporation
Part No. HMC986
OCR Text ...mm] 2. die thickness is .004 3. backside metalization: gold 4. backside metal is ground 5. bond pad metalization: gold 6. overall die size .002 die packaging information [1] standard alternate wp-13 (waffle pack) [2] [1] refer to the pack...
Description GaAs MMIC REFLECTIVE

File Size 433.87K  /  8 Page

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    AGILENT TECHNOLOGIES INC
Part No. AMMC-6420-W50
OCR Text ... otherwise noted. 2. channel-to-backside thermal resistance ( ch-b ) = 10.7c/w at t channel (t c ) = 120c as measured using infrared microscopy. thermal resistance at backside temperature (t b ) = 25c calculated from measured data. notes:...
Description 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

File Size 360.94K  /  8 Page

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    DPG20C400PB DPG20C400PC DPG20C400PN

IXYS Corporation
Part No. DPG20C400PB DPG20C400PC DPG20C400PN
OCR Text ...for power loss calculation only backside: cathode 4a t vj =c reverse recovery time a 6 45 65 ns (50 hz), sine t rr = 45 ns housing: high performance fast recovery diode low loss and soft recovery common cathode to-220 r industry standard...
Description HiPerFRED2

File Size 118.05K  /  4 Page

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    DPG10I200PA

IXYS Corporation
Part No. DPG10I200PA
OCR Text ...for power loss calculation only backside: cathode 3a t vj =c reverse recovery time a 5.5 35 45 ns (50 hz), sine t rr = 35 ns housing: high performance fast recovery diode low loss and soft recovery single diode to-220 r industry standard...
Description High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode

File Size 124.48K  /  4 Page

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    MIMIX BROADBAND INC
Part No. XP1010-BD-000V
OCR Text ... and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for millimeter-wave point-to-point radio, lmds, satcom and vs...
Description 21000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

File Size 197.15K  /  7 Page

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    SI8901DB-T2-E1

VISHAY SILICONIX
Part No. SI8901DB-T2-E1
OCR Text ... view g 2 g 1 4 3 5 6 s 1 s 1 2 backside view 8901 xxx pin 1 identifier ordering information: si8901db-t2?e3 g 2 s 2 g 1 s 1 p-channel absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state uni...
Description 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 94.89K  /  6 Page

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    Mimix Broadband, Inc.
Part No. CMM1100
OCR Text ...and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for fiber optic, microwave radio, military, space, telecom in...
Description 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier

File Size 440.96K  /  6 Page

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    ULM
Part No. ULM850-10-TN-N0104U
OCR Text ...7 ulm850-10-tn-n0101u (10 gbps, backside cathode contact, single channel) si ze 250x250x150 ulm850-10-tn-n0104u (10 gbps, backside cathode contact, 1x4 array) size 1000x250x150 ulm850-10-tn-n0112u (10 gbps, backside cathode contact, 1x1...
Description 10 Gbps VCSEL

File Size 171.06K  /  2 Page

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    IXYS CORP
Part No. DPG30I400HA
OCR Text ...for power loss calculation only backside: cathode 4a t vj =c reverse recovery time a 8.5 45 85 ns (50 hz), sine t rr = 45 ns housing: high performance fast recovery diode low loss and soft recovery single diode to-247 r industry standard...
Description 30 A, 400 V, SILICON, RECTIFIER DIODE, TO-247AD

File Size 117.98K  /  4 Page

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